Interfacial reactions of W thin film on single-crystal (001) β-SiC

L. Baud, C. Jaussaud, R. Madar, C. Bernard, Jen-Sue Chen, M. A. Nicolet

Research output: Contribution to journalArticle

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Abstract

Interfacial reactions between a W thin film and a single-crystal (001) β-SiC substrate on rapid thermal annealing from 600 °C to 1100 °C for 60 s were investigated by backscattering spectrometry, X-ray diffraction, secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Backscattering spectrometry shows that W reacts with SiC at 950 °C. The product phases identified by X-ray diffraction are W5Si3 and W2C. At 1100 °C no more unreacted W is detected. Current-voltage measurements show that ohmic contacts are already obtained on as-deposited W. Contact resistivity measured using the circular transmission line model is about 10-3 Ω cm2. Thermodynamic studies of the solid phase stability in the ternary WSiC system help us to understand the chemical stability of W thin film.

Original languageEnglish
Pages (from-to)126-130
Number of pages5
JournalMaterials Science and Engineering B
Volume29
Issue number1-3
DOIs
Publication statusPublished - 1995 Jan 1

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Backscattering
Surface chemistry
Spectrometry
electric contacts
backscattering
Single crystals
X ray diffraction
Thin films
Phase stability
Ohmic contacts
Rapid thermal annealing
Voltage measurement
single crystals
Chemical stability
Electric current measurement
Ternary systems
thin films
Secondary ion mass spectrometry
ternary systems
diffraction

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Baud, L. ; Jaussaud, C. ; Madar, R. ; Bernard, C. ; Chen, Jen-Sue ; Nicolet, M. A. / Interfacial reactions of W thin film on single-crystal (001) β-SiC. In: Materials Science and Engineering B. 1995 ; Vol. 29, No. 1-3. pp. 126-130.
@article{14cecf36933a47c889fe9a0a521b93fa,
title = "Interfacial reactions of W thin film on single-crystal (001) β-SiC",
abstract = "Interfacial reactions between a W thin film and a single-crystal (001) β-SiC substrate on rapid thermal annealing from 600 °C to 1100 °C for 60 s were investigated by backscattering spectrometry, X-ray diffraction, secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Backscattering spectrometry shows that W reacts with SiC at 950 °C. The product phases identified by X-ray diffraction are W5Si3 and W2C. At 1100 °C no more unreacted W is detected. Current-voltage measurements show that ohmic contacts are already obtained on as-deposited W. Contact resistivity measured using the circular transmission line model is about 10-3 Ω cm2. Thermodynamic studies of the solid phase stability in the ternary WSiC system help us to understand the chemical stability of W thin film.",
author = "L. Baud and C. Jaussaud and R. Madar and C. Bernard and Jen-Sue Chen and Nicolet, {M. A.}",
year = "1995",
month = "1",
day = "1",
doi = "10.1016/0921-5107(94)04017-X",
language = "English",
volume = "29",
pages = "126--130",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "1-3",

}

Interfacial reactions of W thin film on single-crystal (001) β-SiC. / Baud, L.; Jaussaud, C.; Madar, R.; Bernard, C.; Chen, Jen-Sue; Nicolet, M. A.

In: Materials Science and Engineering B, Vol. 29, No. 1-3, 01.01.1995, p. 126-130.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Interfacial reactions of W thin film on single-crystal (001) β-SiC

AU - Baud, L.

AU - Jaussaud, C.

AU - Madar, R.

AU - Bernard, C.

AU - Chen, Jen-Sue

AU - Nicolet, M. A.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Interfacial reactions between a W thin film and a single-crystal (001) β-SiC substrate on rapid thermal annealing from 600 °C to 1100 °C for 60 s were investigated by backscattering spectrometry, X-ray diffraction, secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Backscattering spectrometry shows that W reacts with SiC at 950 °C. The product phases identified by X-ray diffraction are W5Si3 and W2C. At 1100 °C no more unreacted W is detected. Current-voltage measurements show that ohmic contacts are already obtained on as-deposited W. Contact resistivity measured using the circular transmission line model is about 10-3 Ω cm2. Thermodynamic studies of the solid phase stability in the ternary WSiC system help us to understand the chemical stability of W thin film.

AB - Interfacial reactions between a W thin film and a single-crystal (001) β-SiC substrate on rapid thermal annealing from 600 °C to 1100 °C for 60 s were investigated by backscattering spectrometry, X-ray diffraction, secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Backscattering spectrometry shows that W reacts with SiC at 950 °C. The product phases identified by X-ray diffraction are W5Si3 and W2C. At 1100 °C no more unreacted W is detected. Current-voltage measurements show that ohmic contacts are already obtained on as-deposited W. Contact resistivity measured using the circular transmission line model is about 10-3 Ω cm2. Thermodynamic studies of the solid phase stability in the ternary WSiC system help us to understand the chemical stability of W thin film.

UR - http://www.scopus.com/inward/record.url?scp=0029204341&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029204341&partnerID=8YFLogxK

U2 - 10.1016/0921-5107(94)04017-X

DO - 10.1016/0921-5107(94)04017-X

M3 - Article

VL - 29

SP - 126

EP - 130

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -