Interfacial reactions of W thin film on single-crystal (001) β-SiC

L. Baud; C. Jaussaud; R. Madar; C. Bernard; J. S. Chen; M. A. Nicolet

doi:10.1016/0921-5107(94)04017-X

Interfacial reactions of W thin film on single-crystal (001) β-SiC

L. Baud
, C. Jaussaud
, R. Madar
, C. Bernard
, J. S. Chen
, M. A. Nicolet

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

Interfacial reactions between a W thin film and a single-crystal (001) β-SiC substrate on rapid thermal annealing from 600 °C to 1100 °C for 60 s were investigated by backscattering spectrometry, X-ray diffraction, secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Backscattering spectrometry shows that W reacts with SiC at 950 °C. The product phases identified by X-ray diffraction are W₅Si₃ and W₂C. At 1100 °C no more unreacted W is detected. Current-voltage measurements show that ohmic contacts are already obtained on as-deposited W. Contact resistivity measured using the circular transmission line model is about 10^-3 Ω cm². Thermodynamic studies of the solid phase stability in the ternary WSiC system help us to understand the chemical stability of W thin film.

Original language	English
Pages (from-to)	126-130
Number of pages	5
Journal	Materials Science and Engineering B
Volume	29
Issue number	1-3
DOIs	https://doi.org/10.1016/0921-5107(94)04017-X
Publication status	Published - 1995 Jan

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/0921-5107(94)04017-X

Cite this

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title = "Interfacial reactions of W thin film on single-crystal (001) β-SiC",

abstract = "Interfacial reactions between a W thin film and a single-crystal (001) β-SiC substrate on rapid thermal annealing from 600 °C to 1100 °C for 60 s were investigated by backscattering spectrometry, X-ray diffraction, secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Backscattering spectrometry shows that W reacts with SiC at 950 °C. The product phases identified by X-ray diffraction are W5Si3 and W2C. At 1100 °C no more unreacted W is detected. Current-voltage measurements show that ohmic contacts are already obtained on as-deposited W. Contact resistivity measured using the circular transmission line model is about 10-3 Ω cm2. Thermodynamic studies of the solid phase stability in the ternary WSiC system help us to understand the chemical stability of W thin film.",

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TY - JOUR

T1 - Interfacial reactions of W thin film on single-crystal (001) β-SiC

AU - Baud, L.

AU - Jaussaud, C.

AU - Madar, R.

AU - Bernard, C.

AU - Chen, J. S.

AU - Nicolet, M. A.

PY - 1995/1

Y1 - 1995/1

N2 - Interfacial reactions between a W thin film and a single-crystal (001) β-SiC substrate on rapid thermal annealing from 600 °C to 1100 °C for 60 s were investigated by backscattering spectrometry, X-ray diffraction, secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Backscattering spectrometry shows that W reacts with SiC at 950 °C. The product phases identified by X-ray diffraction are W5Si3 and W2C. At 1100 °C no more unreacted W is detected. Current-voltage measurements show that ohmic contacts are already obtained on as-deposited W. Contact resistivity measured using the circular transmission line model is about 10-3 Ω cm2. Thermodynamic studies of the solid phase stability in the ternary WSiC system help us to understand the chemical stability of W thin film.

AB - Interfacial reactions between a W thin film and a single-crystal (001) β-SiC substrate on rapid thermal annealing from 600 °C to 1100 °C for 60 s were investigated by backscattering spectrometry, X-ray diffraction, secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Backscattering spectrometry shows that W reacts with SiC at 950 °C. The product phases identified by X-ray diffraction are W5Si3 and W2C. At 1100 °C no more unreacted W is detected. Current-voltage measurements show that ohmic contacts are already obtained on as-deposited W. Contact resistivity measured using the circular transmission line model is about 10-3 Ω cm2. Thermodynamic studies of the solid phase stability in the ternary WSiC system help us to understand the chemical stability of W thin film.

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DO - 10.1016/0921-5107(94)04017-X

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JO - Materials Science and Engineering B

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IS - 1-3

ER -

Interfacial reactions of W thin film on single-crystal (001) β-SiC

Abstract

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