Interfacial roughness scaling and strain in lattice mismatched Si 0.4Ge0.6 thin films on Si <AUTHGRP>

Z. H. Ming, S. Huang, Y. L. Soo, Y. H. Kao, T. Carns, K. L. Wang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Interfacial roughness parameters and lattice strain of Si 0.4Ge0.6 films with varying thickness epitaxially grown on Si(100) were determined using the techniques of grazing-incidence x-ray scattering and diffraction. The roughness of both the buried interface and sample surface follows a similar power-law scaling behavior with an exponent β around 0.71 for films below the critical thickness, and it undergoes a large change above the critical thickness. Observation of such a scaling law thus establishes a quantitative correlation between the interfacial roughness and lattice strain, and also allows the prediction of interfacial roughness as a function of film thickness of this compound.

Original languageEnglish
Pages (from-to)623
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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