Interfacial roughness parameters and lattice strain of Si 0.4Ge0.6 films with varying thickness epitaxially grown on Si(100) were determined using the techniques of grazing-incidence x-ray scattering and diffraction. The roughness of both the buried interface and sample surface follows a similar power-law scaling behavior with an exponent β around 0.71 for films below the critical thickness, and it undergoes a large change above the critical thickness. Observation of such a scaling law thus establishes a quantitative correlation between the interfacial roughness and lattice strain, and also allows the prediction of interfacial roughness as a function of film thickness of this compound.
|Number of pages||1|
|Journal||Applied Physics Letters|
|Publication status||Published - 1994|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)