Interfacial state density and terahertz radiation on oxide-GaAs interface

Chung Chih Chang, Ming Seng Hsu, Wei Juann Chen, Yau Chyr Wang, Wei-Yang Chou, Jen Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The amplitude of terahertz radiation (THz) from a series of oxide films on GaAs was measured by time resolved THz emission system. The barrier heights and the densities of the interfacial states are determined from the PR intensity as a function of the pump power density. The oxide-GaAs structures fabricated by in situ molecular beam epitaxy exhibit low interfacial state densities in the range of 1011 cm-2. It is found that the amplitude of THz radiation from Al2O3-, Ga2O 3-, and Ga2O3(Gd2O 3)-GaAs structures are increases with interfacial electric field. The reason is that the electric field is lower than the "critical electric field", the amplitude is proportional to the product of the electric field and the number of photo-excited carriers. However, as the field higher than the critical electric field, sample of air-GaAs structure, the lower THz amplitude was obtained due to the maximum drift velocity declines slightly as the field increases.

Original languageEnglish
Title of host publicationPhotonic Fiber and Crystal Devices
Subtitle of host publicationAdvances in Materials and Innovations in Device Applications V
DOIs
Publication statusPublished - 2011 Oct 11
EventPhotonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V - San Diego, CA, United States
Duration: 2011 Aug 212011 Aug 22

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8120
ISSN (Print)0277-786X

Other

OtherPhotonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V
CountryUnited States
CitySan Diego, CA
Period11-08-2111-08-22

Fingerprint

Gallium Arsenide
Oxides
Electric Field
Radiation
Electric fields
oxides
electric fields
radiation
Epitaxy
Molecular beam epitaxy
Pump
Oxide films
oxide films
radiant flux density
molecular beam epitaxy
Directly proportional
gallium arsenide
Pumps
pumps
Series

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Chang, C. C., Hsu, M. S., Chen, W. J., Wang, Y. C., Chou, W-Y., & Huang, J. W. (2011). Interfacial state density and terahertz radiation on oxide-GaAs interface. In Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V [81201B] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8120). https://doi.org/10.1117/12.893218
Chang, Chung Chih ; Hsu, Ming Seng ; Chen, Wei Juann ; Wang, Yau Chyr ; Chou, Wei-Yang ; Huang, Jen Wei. / Interfacial state density and terahertz radiation on oxide-GaAs interface. Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V. 2011. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{be74af417a1f42ba94336fdb04fab39a,
title = "Interfacial state density and terahertz radiation on oxide-GaAs interface",
abstract = "The amplitude of terahertz radiation (THz) from a series of oxide films on GaAs was measured by time resolved THz emission system. The barrier heights and the densities of the interfacial states are determined from the PR intensity as a function of the pump power density. The oxide-GaAs structures fabricated by in situ molecular beam epitaxy exhibit low interfacial state densities in the range of 1011 cm-2. It is found that the amplitude of THz radiation from Al2O3-, Ga2O 3-, and Ga2O3(Gd2O 3)-GaAs structures are increases with interfacial electric field. The reason is that the electric field is lower than the {"}critical electric field{"}, the amplitude is proportional to the product of the electric field and the number of photo-excited carriers. However, as the field higher than the critical electric field, sample of air-GaAs structure, the lower THz amplitude was obtained due to the maximum drift velocity declines slightly as the field increases.",
author = "Chang, {Chung Chih} and Hsu, {Ming Seng} and Chen, {Wei Juann} and Wang, {Yau Chyr} and Wei-Yang Chou and Huang, {Jen Wei}",
year = "2011",
month = "10",
day = "11",
doi = "10.1117/12.893218",
language = "English",
isbn = "9780819487308",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Photonic Fiber and Crystal Devices",

}

Chang, CC, Hsu, MS, Chen, WJ, Wang, YC, Chou, W-Y & Huang, JW 2011, Interfacial state density and terahertz radiation on oxide-GaAs interface. in Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V., 81201B, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8120, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V, San Diego, CA, United States, 11-08-21. https://doi.org/10.1117/12.893218

Interfacial state density and terahertz radiation on oxide-GaAs interface. / Chang, Chung Chih; Hsu, Ming Seng; Chen, Wei Juann; Wang, Yau Chyr; Chou, Wei-Yang; Huang, Jen Wei.

Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V. 2011. 81201B (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8120).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Interfacial state density and terahertz radiation on oxide-GaAs interface

AU - Chang, Chung Chih

AU - Hsu, Ming Seng

AU - Chen, Wei Juann

AU - Wang, Yau Chyr

AU - Chou, Wei-Yang

AU - Huang, Jen Wei

PY - 2011/10/11

Y1 - 2011/10/11

N2 - The amplitude of terahertz radiation (THz) from a series of oxide films on GaAs was measured by time resolved THz emission system. The barrier heights and the densities of the interfacial states are determined from the PR intensity as a function of the pump power density. The oxide-GaAs structures fabricated by in situ molecular beam epitaxy exhibit low interfacial state densities in the range of 1011 cm-2. It is found that the amplitude of THz radiation from Al2O3-, Ga2O 3-, and Ga2O3(Gd2O 3)-GaAs structures are increases with interfacial electric field. The reason is that the electric field is lower than the "critical electric field", the amplitude is proportional to the product of the electric field and the number of photo-excited carriers. However, as the field higher than the critical electric field, sample of air-GaAs structure, the lower THz amplitude was obtained due to the maximum drift velocity declines slightly as the field increases.

AB - The amplitude of terahertz radiation (THz) from a series of oxide films on GaAs was measured by time resolved THz emission system. The barrier heights and the densities of the interfacial states are determined from the PR intensity as a function of the pump power density. The oxide-GaAs structures fabricated by in situ molecular beam epitaxy exhibit low interfacial state densities in the range of 1011 cm-2. It is found that the amplitude of THz radiation from Al2O3-, Ga2O 3-, and Ga2O3(Gd2O 3)-GaAs structures are increases with interfacial electric field. The reason is that the electric field is lower than the "critical electric field", the amplitude is proportional to the product of the electric field and the number of photo-excited carriers. However, as the field higher than the critical electric field, sample of air-GaAs structure, the lower THz amplitude was obtained due to the maximum drift velocity declines slightly as the field increases.

UR - http://www.scopus.com/inward/record.url?scp=80053469667&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053469667&partnerID=8YFLogxK

U2 - 10.1117/12.893218

DO - 10.1117/12.893218

M3 - Conference contribution

SN - 9780819487308

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Photonic Fiber and Crystal Devices

ER -

Chang CC, Hsu MS, Chen WJ, Wang YC, Chou W-Y, Huang JW. Interfacial state density and terahertz radiation on oxide-GaAs interface. In Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V. 2011. 81201B. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.893218