Interplay between different magnetisms in Cr-doped topological insulators

Xufeng Kou, Murong Lang, Yabin Fan, Ying Jiang, Tianxiao Nie, Jianmin Zhang, Wanjun Jiang, Yong Wang, Yugui Yao, Liang He, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

Abstract

Breaking the time-reversal-symmetry of topological insulators through magnetic doping has led to exotic physical discoveries. Here, we report the gate-dependent magneto-transport measurements on the Cr-doped (Bi xSb1-x)2Te3 thin films. With effective top-gate modulations, we demonstrate the presence of both the hole-mediated RKKY coupling and carrier-independent van Vleck magnetism in the magnetic TI systems. Most importantly, by varying the Cr doping concentrations from 2% to 20%, we unveil the interplay between the two magnetic orders and establish the valid approach to either enhance or suppress each individual contribution. The electric-field-controlled ferromagnetisms identified in the Cr-doped TI materials will serve as the fundamental step to further explore the TRS-breaking TI systems, and it may also help to expand the functionality of TI-based device for spintronics applications.

Original languageEnglish
Pages (from-to)9205-9212
Number of pages8
JournalACS nano
Volume7
Issue number10
DOIs
Publication statusPublished - 2013 Oct 22

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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