Intersubband absorption in Si1-xGex/Si multiple quantum wells

R. P.G. Karunasiri, J. S. Park, Y. J. Mii, K. L. Wang

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72 Citations (Scopus)


The intersubband infrared absorption of holes in Si1-xGe x/Si multiple quantum wells is observed. The quantum well structure consists of 10 periods of 40-Å-thick Si0.6Ge0.4 wells and 300-Å-thick Si barriers. The samples are prepared using molecular beam epitaxy. In the experiment, the infrared absorption as a function of wavelength is measured using a waveguide geometry. An absorption peak near 8.1 μm has been observed, which is due to the transition between first two heavy hole bound states. The polarization dependence spectra are in good agreement with the selection rules for the intersubband transition.

Original languageEnglish
Pages (from-to)2585-2587
Number of pages3
JournalApplied Physics Letters
Issue number24
Publication statusPublished - 1990

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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