Intersubband absorption in Si1-xGex/Si multiple quantum wells

R. P.G. Karunasiri; J. S. Park; Y. J. Mii; K. L. Wang

doi:10.1063/1.103823

Intersubband absorption in Si_1-xGe_x/Si multiple quantum wells

R. P.G. Karunasiri
, J. S. Park
, Y. J. Mii
, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

76 Citations (Scopus)

Abstract

The intersubband infrared absorption of holes in Si_1-xGe _x/Si multiple quantum wells is observed. The quantum well structure consists of 10 periods of 40-Å-thick Si_0.6Ge_0.4 wells and 300-Å-thick Si barriers. The samples are prepared using molecular beam epitaxy. In the experiment, the infrared absorption as a function of wavelength is measured using a waveguide geometry. An absorption peak near 8.1 μm has been observed, which is due to the transition between first two heavy hole bound states. The polarization dependence spectra are in good agreement with the selection rules for the intersubband transition.

Original language	English
Pages (from-to)	2585-2587
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	24
DOIs	https://doi.org/10.1063/1.103823
Publication status	Published - 1990

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.103823

Cite this

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title = "Intersubband absorption in Si1-xGex/Si multiple quantum wells",

abstract = "The intersubband infrared absorption of holes in Si1-xGe x/Si multiple quantum wells is observed. The quantum well structure consists of 10 periods of 40-{\AA}-thick Si0.6Ge0.4 wells and 300-{\AA}-thick Si barriers. The samples are prepared using molecular beam epitaxy. In the experiment, the infrared absorption as a function of wavelength is measured using a waveguide geometry. An absorption peak near 8.1 μm has been observed, which is due to the transition between first two heavy hole bound states. The polarization dependence spectra are in good agreement with the selection rules for the intersubband transition.",

author = "Karunasiri, \{R. P.G.\} and Park, \{J. S.\} and Mii, \{Y. J.\} and Wang, \{K. L.\}",

year = "1990",

doi = "10.1063/1.103823",

language = "English",

volume = "57",

pages = "2585--2587",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "24",

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T1 - Intersubband absorption in Si1-xGex/Si multiple quantum wells

AU - Karunasiri, R. P.G.

AU - Park, J. S.

AU - Mii, Y. J.

AU - Wang, K. L.

PY - 1990

Y1 - 1990

N2 - The intersubband infrared absorption of holes in Si1-xGe x/Si multiple quantum wells is observed. The quantum well structure consists of 10 periods of 40-Å-thick Si0.6Ge0.4 wells and 300-Å-thick Si barriers. The samples are prepared using molecular beam epitaxy. In the experiment, the infrared absorption as a function of wavelength is measured using a waveguide geometry. An absorption peak near 8.1 μm has been observed, which is due to the transition between first two heavy hole bound states. The polarization dependence spectra are in good agreement with the selection rules for the intersubband transition.

AB - The intersubband infrared absorption of holes in Si1-xGe x/Si multiple quantum wells is observed. The quantum well structure consists of 10 periods of 40-Å-thick Si0.6Ge0.4 wells and 300-Å-thick Si barriers. The samples are prepared using molecular beam epitaxy. In the experiment, the infrared absorption as a function of wavelength is measured using a waveguide geometry. An absorption peak near 8.1 μm has been observed, which is due to the transition between first two heavy hole bound states. The polarization dependence spectra are in good agreement with the selection rules for the intersubband transition.

UR - https://www.scopus.com/pages/publications/0005376599

UR - https://www.scopus.com/pages/publications/0005376599#tab=citedBy

U2 - 10.1063/1.103823

DO - 10.1063/1.103823

M3 - Article

AN - SCOPUS:0005376599

SN - 0003-6951

VL - 57

SP - 2585

EP - 2587

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Intersubband absorption in Si_1-xGe_x/Si multiple quantum wells

Abstract

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