Intra-level voltage ramping-up to dielectric breakdown failure on Cu/porous low-k interconnections in 45 nm ULSI generation

C. H. Huang, N. F. Wang, Y. Z. Tsai, C. I. Hung, M. P. Houng

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The degradation of reliability for intra-level voltage-breakdown in the 45 nm generation node has become an increasingly important issue with the introduction of porous low-k dielectrics. The dominant failure mechanism for lower voltage ramping-up to dielectric breakdown and higher leakage current was that more electrons easily transported through the percolation path in intra-level porous low-k interconnections damaged from HF corrosion. An optimal ultraviolet curing process and a less NH3 plasma pre-treatment on porous low-k dielectrics before the SiCN capping layer are developed to improve performance in both of these cases. The stiff configuration of the reconstruction of Si-O network structures and less HF corrosion is expected to have high tolerance to electrical failure. As a result, the proposed model of this failure facilitates the understanding of the reliability issue for Cu/porous low-k interconnections in back-end of line (BEOL) beyond 45 nm nodes.

Original languageEnglish
Pages (from-to)1735-1740
Number of pages6
JournalMicroelectronic Engineering
Volume87
Issue number9
DOIs
Publication statusPublished - 2010 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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