Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

Jung Chuan Lee, Leng Wei Huang, Dung Shing Hung, Tung Han Chiang, Jung-Chun Huang, Jun Zhi Liang, Shang Fan Lee

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered.

Original languageEnglish
Article number052401
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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