Inverted Al 0.25 Ga 0.75 N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

Kuo Hua Chang, Jinn-Kong Sheu, Ming Lun Lee, Shang Ju Tu, Chih Ciao Yang, Huan Shao Kuo, J. H. Yang, Wei-Chi Lai

Research output: Contribution to journalArticle

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Abstract

Inverted Al 0.25 Ga 0.75 N/GaN ultraviolet (UV) p-i-n photodiodes (PDs) were grown by selective-area regrowth on p-GaN template. The inverted devices with low-resistivity n-type AlGaN top-contact layers exhibited a typical zero-bias peak responsivity of 66.7 mA/W at 310 nm corresponding to the external quantum efficiency of 26.6%. The typical UV-to-visible (310/400 nm) spectral rejection ratio at zero-bias was over three orders of magnitude. The differential resistance and detectivity were obtained at approximately 6.2× 10 12 Ω and 3.4× 10 13 cm Hz 1/2 W -1 , respectively. Compared with conventional AlGaN/GaN-based UV p-i-n PDs, the proposed device structure can potentially achieve solar-blind AlGaN/GaN-based p-i-n PDs with low-aluminum content or aluminum-free p-contact layer and reduce excessive tensile strain due to the lattice mismatch between AlGaN and GaN layers.

Original languageEnglish
Article number013502
JournalApplied Physics Letters
Volume97
Issue number1
DOIs
Publication statusPublished - 2010 Jul 5

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vapor phase epitaxy
photodiodes
templates
aluminum
rejection
quantum efficiency
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{c81500ab91274fe6b5308c8a69a367a0,
title = "Inverted Al 0.25 Ga 0.75 N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy",
abstract = "Inverted Al 0.25 Ga 0.75 N/GaN ultraviolet (UV) p-i-n photodiodes (PDs) were grown by selective-area regrowth on p-GaN template. The inverted devices with low-resistivity n-type AlGaN top-contact layers exhibited a typical zero-bias peak responsivity of 66.7 mA/W at 310 nm corresponding to the external quantum efficiency of 26.6{\%}. The typical UV-to-visible (310/400 nm) spectral rejection ratio at zero-bias was over three orders of magnitude. The differential resistance and detectivity were obtained at approximately 6.2× 10 12 Ω and 3.4× 10 13 cm Hz 1/2 W -1 , respectively. Compared with conventional AlGaN/GaN-based UV p-i-n PDs, the proposed device structure can potentially achieve solar-blind AlGaN/GaN-based p-i-n PDs with low-aluminum content or aluminum-free p-contact layer and reduce excessive tensile strain due to the lattice mismatch between AlGaN and GaN layers.",
author = "Chang, {Kuo Hua} and Jinn-Kong Sheu and Lee, {Ming Lun} and Tu, {Shang Ju} and Yang, {Chih Ciao} and Kuo, {Huan Shao} and Yang, {J. H.} and Wei-Chi Lai",
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Inverted Al 0.25 Ga 0.75 N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy . / Chang, Kuo Hua; Sheu, Jinn-Kong; Lee, Ming Lun; Tu, Shang Ju; Yang, Chih Ciao; Kuo, Huan Shao; Yang, J. H.; Lai, Wei-Chi.

In: Applied Physics Letters, Vol. 97, No. 1, 013502, 05.07.2010.

Research output: Contribution to journalArticle

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AU - Chang, Kuo Hua

AU - Sheu, Jinn-Kong

AU - Lee, Ming Lun

AU - Tu, Shang Ju

AU - Yang, Chih Ciao

AU - Kuo, Huan Shao

AU - Yang, J. H.

AU - Lai, Wei-Chi

PY - 2010/7/5

Y1 - 2010/7/5

N2 - Inverted Al 0.25 Ga 0.75 N/GaN ultraviolet (UV) p-i-n photodiodes (PDs) were grown by selective-area regrowth on p-GaN template. The inverted devices with low-resistivity n-type AlGaN top-contact layers exhibited a typical zero-bias peak responsivity of 66.7 mA/W at 310 nm corresponding to the external quantum efficiency of 26.6%. The typical UV-to-visible (310/400 nm) spectral rejection ratio at zero-bias was over three orders of magnitude. The differential resistance and detectivity were obtained at approximately 6.2× 10 12 Ω and 3.4× 10 13 cm Hz 1/2 W -1 , respectively. Compared with conventional AlGaN/GaN-based UV p-i-n PDs, the proposed device structure can potentially achieve solar-blind AlGaN/GaN-based p-i-n PDs with low-aluminum content or aluminum-free p-contact layer and reduce excessive tensile strain due to the lattice mismatch between AlGaN and GaN layers.

AB - Inverted Al 0.25 Ga 0.75 N/GaN ultraviolet (UV) p-i-n photodiodes (PDs) were grown by selective-area regrowth on p-GaN template. The inverted devices with low-resistivity n-type AlGaN top-contact layers exhibited a typical zero-bias peak responsivity of 66.7 mA/W at 310 nm corresponding to the external quantum efficiency of 26.6%. The typical UV-to-visible (310/400 nm) spectral rejection ratio at zero-bias was over three orders of magnitude. The differential resistance and detectivity were obtained at approximately 6.2× 10 12 Ω and 3.4× 10 13 cm Hz 1/2 W -1 , respectively. Compared with conventional AlGaN/GaN-based UV p-i-n PDs, the proposed device structure can potentially achieve solar-blind AlGaN/GaN-based p-i-n PDs with low-aluminum content or aluminum-free p-contact layer and reduce excessive tensile strain due to the lattice mismatch between AlGaN and GaN layers.

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