Inverted delta-doped V-shaped InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor

K. H. Yu; Wen-Chau Liu; W. L. Chang; K. W. Lin; K. P. Lin; C. H. Yen

Inverted delta-doped V-shaped InGaP/In_xGa_1-xAs pseudomorphic high electron mobility transistor

K. H. Yu, Wen-Chau Liu, W. L. Chang, K. W. Lin, K. P. Lin, C. H. Yen

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have presented a high-performance InGaP/In_xGa_1-xAs pseudomorphic high electron mobility transistor (PHEMT) in this work. Due to the presence of inverted delta-doped V-shaped InGaP/In_xGa_1-xAs structure, the good carrier confinement together with high-breakdown voltage and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm²) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at V_GS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm. Meanwhile, the studied device exhibits a good microwave frequency linearity.

Original language	English
Pages (from-to)	91-94
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - 2000 Dec 3
Event	2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA Duration: 2000 May 14 → 2000 May 18

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{7276f7635b4a43b690286a584469f4c4,

title = "Inverted delta-doped V-shaped InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor",

abstract = "We have presented a high-performance InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor (PHEMT) in this work. Due to the presence of inverted delta-doped V-shaped InGaP/InxGa1-xAs structure, the good carrier confinement together with high-breakdown voltage and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm. Meanwhile, the studied device exhibits a good microwave frequency linearity.",

author = "Yu, {K. H.} and Wen-Chau Liu and Chang, {W. L.} and Lin, {K. W.} and Lin, {K. P.} and Yen, {C. H.}",

year = "2000",

month = dec,

day = "3",

language = "English",

pages = "91--94",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2000 International Conference on Indium Phosphide and Related Materials ; Conference date: 14-05-2000 Through 18-05-2000",

}

TY - JOUR

T1 - Inverted delta-doped V-shaped InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor

AU - Yu, K. H.

AU - Liu, Wen-Chau

AU - Chang, W. L.

AU - Lin, K. W.

AU - Lin, K. P.

AU - Yen, C. H.

PY - 2000/12/3

Y1 - 2000/12/3

N2 - We have presented a high-performance InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor (PHEMT) in this work. Due to the presence of inverted delta-doped V-shaped InGaP/InxGa1-xAs structure, the good carrier confinement together with high-breakdown voltage and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm. Meanwhile, the studied device exhibits a good microwave frequency linearity.

AB - We have presented a high-performance InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor (PHEMT) in this work. Due to the presence of inverted delta-doped V-shaped InGaP/InxGa1-xAs structure, the good carrier confinement together with high-breakdown voltage and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm. Meanwhile, the studied device exhibits a good microwave frequency linearity.

UR - http://www.scopus.com/inward/record.url?scp=0033690750&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033690750&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033690750

SP - 91

EP - 94

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

T2 - 2000 International Conference on Indium Phosphide and Related Materials

Y2 - 14 May 2000 through 18 May 2000

ER -

Inverted delta-doped V-shaped InGaP/In_xGa_1-xAs pseudomorphic high electron mobility transistor

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this