Abstract
We have presented a high-performance InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor (PHEMT) in this work. Due to the presence of inverted delta-doped V-shaped InGaP/InxGa1-xAs structure, the good carrier confinement together with high-breakdown voltage and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm. Meanwhile, the studied device exhibits a good microwave frequency linearity.
| Original language | English |
|---|---|
| Pages (from-to) | 91-94 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| Publication status | Published - 2000 Dec 3 |
| Event | 2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA Duration: 2000 May 14 → 2000 May 18 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Inverted delta-doped V-shaped InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor. / Yu, K. H.; Liu, Wen-Chau; Chang, W. L.; Lin, K. W.; Lin, K. P.; Yen, C. H.
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 03.12.2000, p. 91-94.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Inverted delta-doped V-shaped InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor
AU - Yu, K. H.
AU - Liu, Wen-Chau
AU - Chang, W. L.
AU - Lin, K. W.
AU - Lin, K. P.
AU - Yen, C. H.
PY - 2000/12/3
Y1 - 2000/12/3
N2 - We have presented a high-performance InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor (PHEMT) in this work. Due to the presence of inverted delta-doped V-shaped InGaP/InxGa1-xAs structure, the good carrier confinement together with high-breakdown voltage and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm. Meanwhile, the studied device exhibits a good microwave frequency linearity.
AB - We have presented a high-performance InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor (PHEMT) in this work. Due to the presence of inverted delta-doped V-shaped InGaP/InxGa1-xAs structure, the good carrier confinement together with high-breakdown voltage and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm. Meanwhile, the studied device exhibits a good microwave frequency linearity.
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M3 - Conference article
AN - SCOPUS:0033690750
SP - 91
EP - 94
JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SN - 1092-8669
ER -