Inverted delta-doped V-shaped InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor

K. H. Yu, Wen-Chau Liu, W. L. Chang, K. W. Lin, K. P. Lin, C. H. Yen

Research output: Contribution to journalConference articlepeer-review

Abstract

We have presented a high-performance InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor (PHEMT) in this work. Due to the presence of inverted delta-doped V-shaped InGaP/InxGa1-xAs structure, the good carrier confinement together with high-breakdown voltage and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm. Meanwhile, the studied device exhibits a good microwave frequency linearity.

Original languageEnglish
Pages (from-to)91-94
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 2000 Dec 3
Event2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA
Duration: 2000 May 142000 May 18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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