Inverted delta-doped V-shaped InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor

K. H. Yu, Wen-Chau Liu, W. L. Chang, K. W. Lin, K. P. Lin, C. H. Yen

Research output: Contribution to journalArticle

Abstract

We have presented a high-performance InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor (PHEMT) in this work. Due to the presence of inverted delta-doped V-shaped InGaP/InxGa1-xAs structure, the good carrier confinement together with high-breakdown voltage and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm. Meanwhile, the studied device exhibits a good microwave frequency linearity.

Original languageEnglish
Pages (from-to)91-94
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 2000

Fingerprint

Transconductance
High electron mobility transistors
transconductance
high electron mobility transistors
Electric breakdown
electrical faults
Microwave frequencies
microwave frequencies
linearity
Current density
current density
saturation
output

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Materials Science(all)

Cite this

@article{7276f7635b4a43b690286a584469f4c4,
title = "Inverted delta-doped V-shaped InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor",
abstract = "We have presented a high-performance InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor (PHEMT) in this work. Due to the presence of inverted delta-doped V-shaped InGaP/InxGa1-xAs structure, the good carrier confinement together with high-breakdown voltage and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm. Meanwhile, the studied device exhibits a good microwave frequency linearity.",
author = "Yu, {K. H.} and Wen-Chau Liu and Chang, {W. L.} and Lin, {K. W.} and Lin, {K. P.} and Yen, {C. H.}",
year = "2000",
language = "English",
pages = "91--94",
journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
issn = "1092-8669",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Inverted delta-doped V-shaped InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor. / Yu, K. H.; Liu, Wen-Chau; Chang, W. L.; Lin, K. W.; Lin, K. P.; Yen, C. H.

In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2000, p. 91-94.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Inverted delta-doped V-shaped InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor

AU - Yu, K. H.

AU - Liu, Wen-Chau

AU - Chang, W. L.

AU - Lin, K. W.

AU - Lin, K. P.

AU - Yen, C. H.

PY - 2000

Y1 - 2000

N2 - We have presented a high-performance InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor (PHEMT) in this work. Due to the presence of inverted delta-doped V-shaped InGaP/InxGa1-xAs structure, the good carrier confinement together with high-breakdown voltage and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm. Meanwhile, the studied device exhibits a good microwave frequency linearity.

AB - We have presented a high-performance InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor (PHEMT) in this work. Due to the presence of inverted delta-doped V-shaped InGaP/InxGa1-xAs structure, the good carrier confinement together with high-breakdown voltage and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm. Meanwhile, the studied device exhibits a good microwave frequency linearity.

UR - http://www.scopus.com/inward/record.url?scp=0033690750&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033690750&partnerID=8YFLogxK

M3 - Article

SP - 91

EP - 94

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

ER -