Abstract
We have presented a high-performance InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor (PHEMT) in this work. Due to the presence of inverted delta-doped V-shaped InGaP/InxGa1-xAs structure, the good carrier confinement together with high-breakdown voltage and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm. Meanwhile, the studied device exhibits a good microwave frequency linearity.
Original language | English |
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Pages (from-to) | 91-94 |
Number of pages | 4 |
Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
Publication status | Published - 2000 Dec 3 |
Event | 2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA Duration: 2000 May 14 → 2000 May 18 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering