Inverted-type inalas/inas high-electron-mobility transistor with liquid phase oxidized inalas as gate insulator

Yuan Ming Chen, Hsien Cheng Lin, Kuan Wei Lee, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

Abstract

An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to enhance the device performance. The proposed inverted-type InAlAs/InAs MOS-HEMT exhibits an improved maximum drain current density, higher transconductance, lower leakage current density, suppressed noise figures, and enhanced associated gain compared to the conventional Schottky-gate HEMT. Employing LPO to generate MOS structure improves the surface states and enhances the energy barrier. These results reveal that the proposed inverted-type InAlAs/InAs MOS-HEMT can provide an alternative option for device applications.

Original languageEnglish
Article number970
Pages (from-to)1-10
Number of pages10
JournalMaterials
Volume14
Issue number4
DOIs
Publication statusPublished - 2021 Feb 2

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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