TY - JOUR
T1 - Investigated performance of uncooled tantalum-doped VO x floating-type microbolometers
AU - Lee, Hsin Ying
AU - Wu, Chia Ling
AU - Kao, Ching Hua
AU - Lee, Ching Ting
AU - Tang, Shiang Feng
AU - Lin, Wen Jen
AU - Chen, Hsin Chang
AU - Lin, Jia Ching
N1 - Funding Information:
This work was supported by the National Chung Shan Institute of Science and Technology under the contract number CSIST-310-V303(103) and the National Nano Device Laboratories supported in fabricated processed.
Publisher Copyright:
© 2015 Elsevier B.V.
PY - 2015/11/1
Y1 - 2015/11/1
N2 - Various tantalum (Ta)-doped vanadium oxide (VO x :Ta) films with various Ta doping contents were deposited on the Si substrates as the sensitive layer of the floating-type microbolometers using a magnetron radio frequency (RF) co-sputtering system. The vanadium (V) target and the tantalum pentoxide (Ta 2 O 5 ) target were used to deposit the VO x :Ta films. To improve the microbolometer responsivity by effectively reducing the thermal loss from the Si substrates, the floating-type microbolometers were fabricated using bulk micromachining technique. From the X-ray photoelectron spectroscopy (XPS) spectra, except the V 2 O 5 and V 6 O 13 , the lower oxygen state of VO x films, such as VO 2 and V 2 O 3 , were also obtained by doping Ta into the VO x films. Consequently, compared with the VO 2 microbolometers, the VO x :Ta microbolometers could operate at a higher operating temperature range. The temperature coefficient of resistance (TCR) and the resistivity of the VO x :Ta (Ta content of 7.63%) films measured by four point probe measurement in heating system were -3.47%/K and 9.32 Ω-cm, respectively. The Ta-doped VO x microbolometer revealed a higher responsivity of 341 kV/W compared with 106 kV/W of the undoped VO x microbolometer.
AB - Various tantalum (Ta)-doped vanadium oxide (VO x :Ta) films with various Ta doping contents were deposited on the Si substrates as the sensitive layer of the floating-type microbolometers using a magnetron radio frequency (RF) co-sputtering system. The vanadium (V) target and the tantalum pentoxide (Ta 2 O 5 ) target were used to deposit the VO x :Ta films. To improve the microbolometer responsivity by effectively reducing the thermal loss from the Si substrates, the floating-type microbolometers were fabricated using bulk micromachining technique. From the X-ray photoelectron spectroscopy (XPS) spectra, except the V 2 O 5 and V 6 O 13 , the lower oxygen state of VO x films, such as VO 2 and V 2 O 3 , were also obtained by doping Ta into the VO x films. Consequently, compared with the VO 2 microbolometers, the VO x :Ta microbolometers could operate at a higher operating temperature range. The temperature coefficient of resistance (TCR) and the resistivity of the VO x :Ta (Ta content of 7.63%) films measured by four point probe measurement in heating system were -3.47%/K and 9.32 Ω-cm, respectively. The Ta-doped VO x microbolometer revealed a higher responsivity of 341 kV/W compared with 106 kV/W of the undoped VO x microbolometer.
UR - http://www.scopus.com/inward/record.url?scp=84944281050&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84944281050&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2015.03.008
DO - 10.1016/j.apsusc.2015.03.008
M3 - Article
AN - SCOPUS:84944281050
VL - 354
SP - 106
EP - 109
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -