Investigating the applicability of ferroelectric hafnium-zirconium-oxide-based nanowire transistors in silicon photonics

Ricky W. Chuang, Yen Ling Lee, Yu Chun Huang, Yao Jen Lee, Chun Jung Su

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The nanowire transistors on silicon-on-insulator (SOI) substrate embedded with ferroelectric hafnium-zirconium-oxide (HfZrO2) are elaborately probed when the devices are illuminated with the ultraviolet (UV) laser. The basic functionality of the ferroelectric nanowire transistor can be verified by monitoring the drain current hysteresis during the bidirectional gate voltage scan. Therefore, this study mainly analyzes and summarizes the electrical response of the device to ultraviolet (UV) irradiation; the main emphases will be placed on the rotational direction of the hysteresis window and the width of the hysteresis window when components of different dimensions are compared with one another. To administer the comparisons impartially, the pertinent surface-to-volume ratios of these nanowire transistors are used as the gauging parameters. As the device measurements would demonstrate, Hysteresis rotating in a clockwise direction is attributed to the oxide layer defects, while the counterclockwise direction is induced by the ferroelectric effect. Needless to say, the quality of the device itself is still contingent upon the gate oxide robustness and the quality of its adjacent interfaces. And last but not least, the threshold voltage shift is also used as an indicator to illuminate the impact of changing polarization effect on the nanoscale devices. Through the effective modulation of the hysteretic window by irradiating the nanowire FETs with a UV laser, we believe many unique applications involving the optical modulation and photodetection that are commonly found in silicon photonics can be realized.

Original languageEnglish
Title of host publicationSilicon Photonics XVI
EditorsGraham T. Reed, Andrew P. Knights
PublisherSPIE
ISBN (Electronic)9781510642171
DOIs
Publication statusPublished - 2021
EventSilicon Photonics XVI 2021 - Virtual, Online, United States
Duration: 2021 Mar 62021 Mar 11

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11691
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSilicon Photonics XVI 2021
Country/TerritoryUnited States
CityVirtual, Online
Period21-03-0621-03-11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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