Investigation and fabrication of AlGaN/GaN MOS-HEMTs with gate insulators grown by photoelectrochemical oxidation method

Ching Ting Lee, Li Hsien Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

AlGaN/GaN MOS-HEMTs with gate insulators directly grown using photoelectrochemical (FEC) oxidation method were investigated. The gate length and the gate width is 1 μm and 50 μm, respectively. The drain-source saturation current (VGS=0 V) and the threshold voltage of AlGaN/GaN MOS-HEMTs is 580 mA/mm and -9 V, respectively. The maximum extrinsic transconductance is 76.72 mS/mm operated at VGS=- 5.1 V and V DS=10 V. The forward breakdown voltage and reverse breakdown voltage is 25 V and larger than -100 V, respectively. When the VGS=- 60 V and 20 V, the leakage current was 102 nA and 960 nA, respectively. The low frequency noise characteristics were also measured and studied. The Hooge's coefficient estimated at VGS=0 V. When VDS is 10 V and 2 V at frequency of 100 Hz, the Hooge's coefficient is 1.25 × 10-3 and 5.69 × 10-4, respectively.

Original languageEnglish
Title of host publicationECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9
Pages103-109
Number of pages7
Edition7
DOIs
Publication statusPublished - 2008 Dec 1
EventState-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 122008 Oct 17

Publication series

NameECS Transactions
Number7
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherState-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08-10-1208-10-17

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Lee, C. T., & Huang, L. H. (2008). Investigation and fabrication of AlGaN/GaN MOS-HEMTs with gate insulators grown by photoelectrochemical oxidation method. In ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 (7 ed., pp. 103-109). (ECS Transactions; Vol. 16, No. 7). https://doi.org/10.1149/1.2983164