TY - GEN
T1 - Investigation and fabrication of AlGaN/GaN MOS-HEMTs with gate insulators grown by photoelectrochemical oxidation method
AU - Lee, Ching Ting
AU - Huang, Li Hsien
PY - 2009
Y1 - 2009
N2 - AlGaN/GaN MOS-HEMTs with gate insulators directly grown using photoelectrochemical (FEC) oxidation method were investigated. The gate length and the gate width is 1 μm and 50 μm, respectively. The drain-source saturation current (VGS=0 V) and the threshold voltage of AlGaN/GaN MOS-HEMTs is 580 mA/mm and -9 V, respectively. The maximum extrinsic transconductance is 76.72 mS/mm operated at VGS=- 5.1 V and V DS=10 V. The forward breakdown voltage and reverse breakdown voltage is 25 V and larger than -100 V, respectively. When the VGS=- 60 V and 20 V, the leakage current was 102 nA and 960 nA, respectively. The low frequency noise characteristics were also measured and studied. The Hooge's coefficient estimated at VGS=0 V. When VDS is 10 V and 2 V at frequency of 100 Hz, the Hooge's coefficient is 1.25 × 10-3 and 5.69 × 10-4, respectively.
AB - AlGaN/GaN MOS-HEMTs with gate insulators directly grown using photoelectrochemical (FEC) oxidation method were investigated. The gate length and the gate width is 1 μm and 50 μm, respectively. The drain-source saturation current (VGS=0 V) and the threshold voltage of AlGaN/GaN MOS-HEMTs is 580 mA/mm and -9 V, respectively. The maximum extrinsic transconductance is 76.72 mS/mm operated at VGS=- 5.1 V and V DS=10 V. The forward breakdown voltage and reverse breakdown voltage is 25 V and larger than -100 V, respectively. When the VGS=- 60 V and 20 V, the leakage current was 102 nA and 960 nA, respectively. The low frequency noise characteristics were also measured and studied. The Hooge's coefficient estimated at VGS=0 V. When VDS is 10 V and 2 V at frequency of 100 Hz, the Hooge's coefficient is 1.25 × 10-3 and 5.69 × 10-4, respectively.
UR - https://www.scopus.com/pages/publications/63849299097
UR - https://www.scopus.com/pages/publications/63849299097#tab=citedBy
U2 - 10.1149/1.2983164
DO - 10.1149/1.2983164
M3 - Conference contribution
AN - SCOPUS:63849299097
SN - 9781566776530
T3 - ECS Transactions
SP - 103
EP - 109
BT - ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9
PB - Electrochemical Society Inc.
T2 - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting
Y2 - 12 October 2008 through 17 October 2008
ER -