Investigation and fabrication of bottom gate ZnO:Al TTFTs with various thicknesses of ZnO buffer layers

Yung Hao Lin; Hsin Ying Lee; Ching Ting Lee

doi:10.1149/13377095

Investigation and fabrication of bottom gate ZnO:Al TTFTs with various thicknesses of ZnO buffer layers

Yung Hao Lin, Hsin Ying Lee, Ching Ting Lee

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An Al doped ZnO (ZnO:Al) transparent thin film transistors (TTFTs) with various thickness of ZnO buffer layer sandwiched between gate insulator and channel layer were deposited by a magnetron radio frequency co-sputter system. When the thickness of the buffer layer was 80 nm, the field-effect carrier mobility of the TTFTs was as high as 122.0 cm²/V-s. Furthermore, the associated gate voltage swing was 0.24 V/decade, and the maximum state density was 2.69×10¹¹ eV^-1cm². The on-to-off current ratio of the TTFTs with 80 nm-thick ZnO buffer layer was up to 5×10⁷.

Original language	English
Title of host publication	Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
Pages	21-26
Number of pages	6
Edition	4
DOIs	https://doi.org/10.1149/13377095
Publication status	Published - 2010 Dec 29
Event	Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting - Vancouver, BC, Canada Duration: 2010 Apr 25 → 2010 Apr 30

Publication series

Name	ECS Transactions
Number	4
Volume	28
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting
Country	Canada
City	Vancouver, BC
Period	10-04-25 → 10-04-30

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/13377095

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@inproceedings{51d9e503f25b4547a82ee8997c0b59d9,

title = "Investigation and fabrication of bottom gate ZnO:Al TTFTs with various thicknesses of ZnO buffer layers",

abstract = "An Al doped ZnO (ZnO:Al) transparent thin film transistors (TTFTs) with various thickness of ZnO buffer layer sandwiched between gate insulator and channel layer were deposited by a magnetron radio frequency co-sputter system. When the thickness of the buffer layer was 80 nm, the field-effect carrier mobility of the TTFTs was as high as 122.0 cm2/V-s. Furthermore, the associated gate voltage swing was 0.24 V/decade, and the maximum state density was 2.69×1011 eV-1cm2. The on-to-off current ratio of the TTFTs with 80 nm-thick ZnO buffer layer was up to 5×107.",

author = "Lin, {Yung Hao} and Lee, {Hsin Ying} and Lee, {Ching Ting}",

year = "2010",

month = dec,

day = "29",

doi = "10.1149/13377095",

language = "English",

isbn = "9781566777940",

series = "ECS Transactions",

number = "4",

pages = "21--26",

booktitle = "Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52",

edition = "4",

note = "Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting ; Conference date: 25-04-2010 Through 30-04-2010",

}

Lin, YH, Lee, HY & Lee, CT 2010, Investigation and fabrication of bottom gate ZnO:Al TTFTs with various thicknesses of ZnO buffer layers. in Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52. 4 edn, ECS Transactions, no. 4, vol. 28, pp. 21-26, Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting, Vancouver, BC, Canada, 10-04-25. https://doi.org/10.1149/13377095

Investigation and fabrication of bottom gate ZnO:Al TTFTs with various thicknesses of ZnO buffer layers. / Lin, Yung Hao; Lee, Hsin Ying ; Lee, Ching Ting.

Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52. 4. ed. 2010. p. 21-26 (ECS Transactions; Vol. 28, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Investigation and fabrication of bottom gate ZnO:Al TTFTs with various thicknesses of ZnO buffer layers

AU - Lin, Yung Hao

AU - Lee, Hsin Ying

AU - Lee, Ching Ting

PY - 2010/12/29

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N2 - An Al doped ZnO (ZnO:Al) transparent thin film transistors (TTFTs) with various thickness of ZnO buffer layer sandwiched between gate insulator and channel layer were deposited by a magnetron radio frequency co-sputter system. When the thickness of the buffer layer was 80 nm, the field-effect carrier mobility of the TTFTs was as high as 122.0 cm2/V-s. Furthermore, the associated gate voltage swing was 0.24 V/decade, and the maximum state density was 2.69×1011 eV-1cm2. The on-to-off current ratio of the TTFTs with 80 nm-thick ZnO buffer layer was up to 5×107.

AB - An Al doped ZnO (ZnO:Al) transparent thin film transistors (TTFTs) with various thickness of ZnO buffer layer sandwiched between gate insulator and channel layer were deposited by a magnetron radio frequency co-sputter system. When the thickness of the buffer layer was 80 nm, the field-effect carrier mobility of the TTFTs was as high as 122.0 cm2/V-s. Furthermore, the associated gate voltage swing was 0.24 V/decade, and the maximum state density was 2.69×1011 eV-1cm2. The on-to-off current ratio of the TTFTs with 80 nm-thick ZnO buffer layer was up to 5×107.

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