@inproceedings{51d9e503f25b4547a82ee8997c0b59d9,
title = "Investigation and fabrication of bottom gate ZnO:Al TTFTs with various thicknesses of ZnO buffer layers",
abstract = "An Al doped ZnO (ZnO:Al) transparent thin film transistors (TTFTs) with various thickness of ZnO buffer layer sandwiched between gate insulator and channel layer were deposited by a magnetron radio frequency co-sputter system. When the thickness of the buffer layer was 80 nm, the field-effect carrier mobility of the TTFTs was as high as 122.0 cm2/V-s. Furthermore, the associated gate voltage swing was 0.24 V/decade, and the maximum state density was 2.69×1011 eV-1cm2. The on-to-off current ratio of the TTFTs with 80 nm-thick ZnO buffer layer was up to 5×107.",
author = "Lin, {Yung Hao} and Lee, {Hsin Ying} and Lee, {Ching Ting}",
year = "2010",
doi = "10.1149/13377095",
language = "English",
isbn = "9781566777940",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "21--26",
booktitle = "Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52",
edition = "4",
}