Investigation and fabrication of bottom gate ZnO:Al TTFTs with various thicknesses of ZnO buffer layers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An Al doped ZnO (ZnO:Al) transparent thin film transistors (TTFTs) with various thickness of ZnO buffer layer sandwiched between gate insulator and channel layer were deposited by a magnetron radio frequency co-sputter system. When the thickness of the buffer layer was 80 nm, the field-effect carrier mobility of the TTFTs was as high as 122.0 cm2/V-s. Furthermore, the associated gate voltage swing was 0.24 V/decade, and the maximum state density was 2.69×1011 eV-1cm2. The on-to-off current ratio of the TTFTs with 80 nm-thick ZnO buffer layer was up to 5×107.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
Pages21-26
Number of pages6
Edition4
DOIs
Publication statusPublished - 2010 Dec 29
EventWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting - Vancouver, BC, Canada
Duration: 2010 Apr 252010 Apr 30

Publication series

NameECS Transactions
Number4
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period10-04-2510-04-30

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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