Investigation into microstructural and electrical characteristics of Ni-Cr-Si thin-film resistors deposited in Al2O3 substrate using DC and RF magnetron sputtering

Chen Su Chiang, Wen Hsi Lee, Franco Jap

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this study, the Ni-Cr-Si material of thin film resistor on Al 2O3 substrate using DC and RF magnetron sputtering techniques are compared. It can be seen that the difference of crystalline structure with various sputtering methods can be observed using X-ray diffraction spectra pattern. The uniform large grain size with low resistance can be obtained by using a high annealing temperature of 450°C. In addition, a stable near-zero temperature coefficient of resistance (8 ppm /°C) can be attained by using RF sputtering with annealing temperature at 400°C.

Original languageEnglish
Title of host publication2014 International Symposium on Next-Generation Electronics, ISNE 2014
PublisherIEEE Computer Society
ISBN (Print)9781479947805
DOIs
Publication statusPublished - 2014 Jan 1
Event3rd International Symposium on Next-Generation Electronics, ISNE 2014 - Taoyuan, Taiwan
Duration: 2014 May 72014 May 10

Publication series

Name2014 International Symposium on Next-Generation Electronics, ISNE 2014

Other

Other3rd International Symposium on Next-Generation Electronics, ISNE 2014
CountryTaiwan
CityTaoyuan
Period14-05-0714-05-10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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