@inproceedings{fffe4b0b5c24471c82537de71e3493f1,
title = "Investigation into microstructural and electrical characteristics of Ni-Cr-Si thin-film resistors deposited in Al2O3 substrate using DC and RF magnetron sputtering",
abstract = "In this study, the Ni-Cr-Si material of thin film resistor on Al 2O3 substrate using DC and RF magnetron sputtering techniques are compared. It can be seen that the difference of crystalline structure with various sputtering methods can be observed using X-ray diffraction spectra pattern. The uniform large grain size with low resistance can be obtained by using a high annealing temperature of 450°C. In addition, a stable near-zero temperature coefficient of resistance (8 ppm /°C) can be attained by using RF sputtering with annealing temperature at 400°C.",
author = "Chiang, {Chen Su} and Lee, {Wen Hsi} and Franco Jap",
year = "2014",
month = jan,
day = "1",
doi = "10.1109/ISNE.2014.6839380",
language = "English",
isbn = "9781479947805",
series = "2014 International Symposium on Next-Generation Electronics, ISNE 2014",
publisher = "IEEE Computer Society",
booktitle = "2014 International Symposium on Next-Generation Electronics, ISNE 2014",
address = "United States",
note = "3rd International Symposium on Next-Generation Electronics, ISNE 2014 ; Conference date: 07-05-2014 Through 10-05-2014",
}