An InGaAS/GaAs heterostructure transistor utilizing a graded InxGa1-xAs channel grown by low-pressure metal-olorganic chemical vapor deposition has been demonstrated. A negative differential resistance (NDR) phenomenon is observed. Electron mobilities are significantly improved by using the graded InGaAs channel. For the In composition varying from x = 0.25 (at the buffer-channel interface) to x = 0.1 (at the spacer-channel interface) structure, a peak extrinsic transconductance of 24.6 S mm-1 (at VDS = 6.5 V, VGS step = -0.5 mV) and a saturation current density as high as 555 mA mm-1 for a gate length of 1.5 μm are obtained.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering