Investigation of a graded channel InGaAs/GaAs heterostructure transistor

Yih Juan Li, Jan Shing Su, Yu Shyan Lin, Wei Chou Hsu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

An InGaAS/GaAs heterostructure transistor utilizing a graded InxGa1-xAs channel grown by low-pressure metal-olorganic chemical vapor deposition has been demonstrated. A negative differential resistance (NDR) phenomenon is observed. Electron mobilities are significantly improved by using the graded InGaAs channel. For the In composition varying from x = 0.25 (at the buffer-channel interface) to x = 0.1 (at the spacer-channel interface) structure, a peak extrinsic transconductance of 24.6 S mm-1 (at VDS = 6.5 V, VGS step = -0.5 mV) and a saturation current density as high as 555 mA mm-1 for a gate length of 1.5 μm are obtained.

Original languageEnglish
Pages (from-to)47-54
Number of pages8
JournalUnknown Journal
Volume28
Issue number1
DOIs
Publication statusPublished - 2000 Jul

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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