An interesting new InGaP-InGaAs pseudomorphic double doped-channel hetcrostructure field-effect transistor (PDDCHFET) is fabricated and demonstrated. Due to the employed InGaAs double doped channel (DDC) structure and Schottky behaviors of InGaP "insulator," good dc properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional (2-D) simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over a wide operating temperature region (300 < T < 450 K). Therefore, the studied PDDCHFET provides the promise for high-temperature and high-performance microwave electronic applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering