Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET)

Hung Ming Chuang, Shiou Ying Cheng, Chun Yuan Chen, Xin Da Liao, Rong Chau Liu, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

An interesting new InGaP-InGaAs pseudomorphic double doped-channel hetcrostructure field-effect transistor (PDDCHFET) is fabricated and demonstrated. Due to the employed InGaAs double doped channel (DDC) structure and Schottky behaviors of InGaP "insulator," good dc properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional (2-D) simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over a wide operating temperature region (300 < T < 450 K). Therefore, the studied PDDCHFET provides the promise for high-temperature and high-performance microwave electronic applications.

Original languageEnglish
Pages (from-to)1717-1723
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume50
Issue number8
DOIs
Publication statusPublished - 2003 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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