TY - JOUR
T1 - Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET)
AU - Chuang, Hung Ming
AU - Cheng, Shiou Ying
AU - Chen, Chun Yuan
AU - Liao, Xin Da
AU - Liu, Rong Chau
AU - Liu, Wen Chau
N1 - Funding Information:
Manuscript received February 24, 2003; revised May 13, 2003. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC-91-2215-E-006-016. The review of this paper was arranged by Editor C.-P. Lee. H.-M. Chuang, C.-Y. Chen, X.-D. Liao, and W.-C. Liu are with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan 70101, R.O.C. (e-mail: [email protected]). S.-Y. Cheng is with the Department of Electrical Engineering, Oriental Institute of Technology, Taipei, Taiwan, R.O.C. R.-C. Liu is with the Chung Shan Institute of Science and Technology, Lung-Ten, Tao-Yuan, Taiwan, R.O.C. Digital Object Identifier 10.1109/TED.2003.815145
PY - 2003/8
Y1 - 2003/8
N2 - An interesting new InGaP-InGaAs pseudomorphic double doped-channel hetcrostructure field-effect transistor (PDDCHFET) is fabricated and demonstrated. Due to the employed InGaAs double doped channel (DDC) structure and Schottky behaviors of InGaP "insulator," good dc properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional (2-D) simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over a wide operating temperature region (300 < T < 450 K). Therefore, the studied PDDCHFET provides the promise for high-temperature and high-performance microwave electronic applications.
AB - An interesting new InGaP-InGaAs pseudomorphic double doped-channel hetcrostructure field-effect transistor (PDDCHFET) is fabricated and demonstrated. Due to the employed InGaAs double doped channel (DDC) structure and Schottky behaviors of InGaP "insulator," good dc properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional (2-D) simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over a wide operating temperature region (300 < T < 450 K). Therefore, the studied PDDCHFET provides the promise for high-temperature and high-performance microwave electronic applications.
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U2 - 10.1109/TED.2003.815145
DO - 10.1109/TED.2003.815145
M3 - Article
AN - SCOPUS:0042026655
SN - 0018-9383
VL - 50
SP - 1717
EP - 1723
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 8
ER -