An interesting AlGaAs/InGaAs/GaAs step-doped channel negative-differential-resistance transistor (SDCN-DRT) has been fabricated. The SDCNDRT is based on a previously reported step-doped-channel field-effect transistor (SDCFET). The N-shaped negative-differential resistance (NDR) are three-terminal-controlled NDR phenomena. We believe that the NDR phenomena can be attributed to the real space transfer (RST). A maximum drain current and peak-to-valley current ratio (PVCR) of 59 mA and 6.6 are obtained, respectively. The high drain current and PVCR indicate the potential of the SDCFET for practical circuit applications.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||5 A|
|Publication status||Published - 1997 May|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)