Investigation of a step-doped-channel negative-differential-resistance transistor

Lih Wen Laih, Shiou Ying Cheng, Kun Wei Lin, Po Hung Lin, Jing Yuh Chen, Wei Chou Wang, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review


An interesting AlGaAs/InGaAs/GaAs step-doped channel negative-differential-resistance transistor (SDCN-DRT) has been fabricated. The SDCNDRT is based on a previously reported step-doped-channel field-effect transistor (SDCFET). The N-shaped negative-differential resistance (NDR) are three-terminal-controlled NDR phenomena. We believe that the NDR phenomena can be attributed to the real space transfer (RST). A maximum drain current and peak-to-valley current ratio (PVCR) of 59 mA and 6.6 are obtained, respectively. The high drain current and PVCR indicate the potential of the SDCFET for practical circuit applications.

Original languageEnglish
Pages (from-to)2617-2620
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number5 A
Publication statusPublished - 1997 May

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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