Investigation of accumulated carrier mechanism on sulfurated GaN layers

Yow Jon Lin, Chi Sen Lee, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The induced electron concentration accumulated on the sulfurated layer of the n-type GaN layers was studied using a simple resistance model. The electron concentration within the sulfurated layer was found to increase from its original value of 6.9×1017 cm-3 to 8.2×1019 cm-3. The induced electrons were due to the sulfur atoms occupying nitrogen vacancies.

Original languageEnglish
Pages (from-to)5321-5324
Number of pages4
JournalJournal of Applied Physics
Issue number9
Publication statusPublished - 2003 May 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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