Investigation of accumulated carrier mechanism on sulfurated GaN layers

Yow Jon Lin; Chi Sen Lee; Ching Ting Lee

doi:10.1063/1.1563821

Investigation of accumulated carrier mechanism on sulfurated GaN layers

Yow Jon Lin, Chi Sen Lee, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The induced electron concentration accumulated on the sulfurated layer of the n-type GaN layers was studied using a simple resistance model. The electron concentration within the sulfurated layer was found to increase from its original value of 6.9×10¹⁷ cm^-3 to 8.2×10¹⁹ cm^-3. The induced electrons were due to the sulfur atoms occupying nitrogen vacancies.

Original language	English
Pages (from-to)	5321-5324
Number of pages	4
Journal	Journal of Applied Physics
Volume	93
Issue number	9
DOIs	https://doi.org/10.1063/1.1563821
Publication status	Published - 2003 May 1

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1563821

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title = "Investigation of accumulated carrier mechanism on sulfurated GaN layers",

abstract = "The induced electron concentration accumulated on the sulfurated layer of the n-type GaN layers was studied using a simple resistance model. The electron concentration within the sulfurated layer was found to increase from its original value of 6.9×1017 cm-3 to 8.2×1019 cm-3. The induced electrons were due to the sulfur atoms occupying nitrogen vacancies.",

author = "Lin, {Yow Jon} and Lee, {Chi Sen} and Lee, {Ching Ting}",

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AU - Lee, Chi Sen

AU - Lee, Ching Ting

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N2 - The induced electron concentration accumulated on the sulfurated layer of the n-type GaN layers was studied using a simple resistance model. The electron concentration within the sulfurated layer was found to increase from its original value of 6.9×1017 cm-3 to 8.2×1019 cm-3. The induced electrons were due to the sulfur atoms occupying nitrogen vacancies.

AB - The induced electron concentration accumulated on the sulfurated layer of the n-type GaN layers was studied using a simple resistance model. The electron concentration within the sulfurated layer was found to increase from its original value of 6.9×1017 cm-3 to 8.2×1019 cm-3. The induced electrons were due to the sulfur atoms occupying nitrogen vacancies.

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U2 - 10.1063/1.1563821

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M3 - Article

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Investigation of accumulated carrier mechanism on sulfurated GaN layers

Abstract

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