TY - GEN
T1 - Investigation of acoustic properties and Raman scattering of AlN films for biosensor application
AU - Chung, Chung Jen
AU - Hsieh, Po Tsung
AU - Lin, Jen Fin
AU - Wei, Ching Liang
AU - Chang, Wei Tsai
AU - Chen, Cheng Ting
AU - Chen, Ying Chung
AU - Cheng, Chien Chuan
AU - Lin, Cheng Hsiang
AU - Chiu, Kuo Chih
AU - Chen, Shean Jen
AU - Kao, Kuo Sheng
PY - 2011/10/4
Y1 - 2011/10/4
N2 - In this study, two approach of the molecular-level detection technique, acoustic-based and Raman-scattering-based detection, are adopted. The acoustic resonant signals are sensitive to the loading mass, such as nano particles and bio-molecules, while Raman scattering signals are highly surface sensitive to a wide range of adsorbate molecules. Aluminum nitride (AlN) thin film dominars both of the techniques. In the acoustic device, AlN acts as a piezoelectric layer to excite acoustic wave. In the Raman scattering experiment, the surface morphology of AlN give rise to a surface enhanced Raman signal. Thus, thin film bulk acoustic wave (TFBAW) properties as well as the surface enhanced Raman spectroscopy (SERS) signals of AlN are investigated. To obtain good piezoelectricity, a highly c-axis orientated AlN thin film is prepared by a reactive RF magnetron sputtering system. The c-axis orientated AlN possesses a pebble-like morphology, which is suitable for the SERS. Solidly-mounted resonators (SMR) are adopted to excite high frequency resonant signal, and the 1.5 GHz shear resonance signal is obtained. In the SERS measurement, the aqueous solution of Rhodamine 6G with concentration of 10-6 M added with 10 mM of sodium chloride was utilized to calibrate the enhancement factors.
AB - In this study, two approach of the molecular-level detection technique, acoustic-based and Raman-scattering-based detection, are adopted. The acoustic resonant signals are sensitive to the loading mass, such as nano particles and bio-molecules, while Raman scattering signals are highly surface sensitive to a wide range of adsorbate molecules. Aluminum nitride (AlN) thin film dominars both of the techniques. In the acoustic device, AlN acts as a piezoelectric layer to excite acoustic wave. In the Raman scattering experiment, the surface morphology of AlN give rise to a surface enhanced Raman signal. Thus, thin film bulk acoustic wave (TFBAW) properties as well as the surface enhanced Raman spectroscopy (SERS) signals of AlN are investigated. To obtain good piezoelectricity, a highly c-axis orientated AlN thin film is prepared by a reactive RF magnetron sputtering system. The c-axis orientated AlN possesses a pebble-like morphology, which is suitable for the SERS. Solidly-mounted resonators (SMR) are adopted to excite high frequency resonant signal, and the 1.5 GHz shear resonance signal is obtained. In the SERS measurement, the aqueous solution of Rhodamine 6G with concentration of 10-6 M added with 10 mM of sodium chloride was utilized to calibrate the enhancement factors.
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U2 - 10.1109/NEMS.2011.6017431
DO - 10.1109/NEMS.2011.6017431
M3 - Conference contribution
AN - SCOPUS:80053318122
SN - 9781612847757
T3 - NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
SP - 618
EP - 621
BT - NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
T2 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
Y2 - 20 February 2011 through 23 February 2011
ER -