Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors with Al2O3 Surface Passivation and Sensing Membrane

Han Yin Liu; Wei Chou Hsu; Wei Fan Chen; Chih Wei Lin; Yi Ying Li; Ching Sung Lee; Wen Ching Sun; Sung Yen Wei; Sheng Min Yu

doi:10.1109/JSEN.2016.2531107

Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors with Al₂O₃ Surface Passivation and Sensing Membrane

Han Yin Liu, Wei Chou Hsu, Wei Fan Chen, Chih Wei Lin, Yi Ying Li, Ching Sung Lee, Wen Ching Sun, Sung Yen Wei, Sheng Min Yu

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

This paper demonstrates an AlGaN/GaN ion-sensitive heterostructure field-effect transistors (ISHFETs)-based pH sensors with an aluminum oxide (Al₂O₃) to serve as a passivation layer and a sensing membrane at the same time. Al₂O₃ was deposited by the ultrasonic spray pyrolysis deposition (USPD) method. It was found that the ISHFET with Al₂O₃ showed a higher pH sensitivity of 55.6 mV/pH, a faster response speed of 3 s (from pH 4 to pH 7) and 7 s (from pH 7 to pH 10), a lower hysteresis voltage of 4.3 mV, and a smaller drift rate of 1.25 mV/h (at pH 7) compared with the ISHFET without passivation. In addition, the ISHFET with an Al₂O₃ passivation layer exhibited significant surface potential variation and low degradation rate. These results suggest that the performance of ISHFET improved using USPD-grown Al₂O₃.

Original language	English
Article number	7409941
Pages (from-to)	3514-3522
Number of pages	9
Journal	IEEE Sensors Journal
Volume	16
Issue number	10
DOIs	https://doi.org/10.1109/JSEN.2016.2531107
Publication status	Published - 2016 May 15

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

Access to Document

10.1109/JSEN.2016.2531107

Fingerprint Dive into the research topics of 'Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors with Al<sub>2</sub>O<sub>3</sub> Surface Passivation and Sensing Membrane'. Together they form a unique fingerprint.

Cite this

@article{25ef94db85a84363ad508b34f3efcc50,

title = "Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors with Al2O3 Surface Passivation and Sensing Membrane",

abstract = "This paper demonstrates an AlGaN/GaN ion-sensitive heterostructure field-effect transistors (ISHFETs)-based pH sensors with an aluminum oxide (Al2O3) to serve as a passivation layer and a sensing membrane at the same time. Al2O3 was deposited by the ultrasonic spray pyrolysis deposition (USPD) method. It was found that the ISHFET with Al2O3 showed a higher pH sensitivity of 55.6 mV/pH, a faster response speed of 3 s (from pH 4 to pH 7) and 7 s (from pH 7 to pH 10), a lower hysteresis voltage of 4.3 mV, and a smaller drift rate of 1.25 mV/h (at pH 7) compared with the ISHFET without passivation. In addition, the ISHFET with an Al2O3 passivation layer exhibited significant surface potential variation and low degradation rate. These results suggest that the performance of ISHFET improved using USPD-grown Al2O3.",

author = "Liu, {Han Yin} and Hsu, {Wei Chou} and Chen, {Wei Fan} and Lin, {Chih Wei} and Li, {Yi Ying} and Lee, {Ching Sung} and Sun, {Wen Ching} and Wei, {Sung Yen} and Yu, {Sheng Min}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology, Taiwan, under Contract MOST 103-2221-E-006-238-MY3 and Contract MOST 104-2218-E-035-009.",

year = "2016",

month = may,

day = "15",

doi = "10.1109/JSEN.2016.2531107",

language = "English",

volume = "16",

pages = "3514--3522",

journal = "IEEE Sensors Journal",

issn = "1530-437X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors with Al₂O₃ Surface Passivation and Sensing Membrane. / Liu, Han Yin; Hsu, Wei Chou; Chen, Wei Fan; Lin, Chih Wei; Li, Yi Ying; Lee, Ching Sung; Sun, Wen Ching; Wei, Sung Yen; Yu, Sheng Min.

In: IEEE Sensors Journal, Vol. 16, No. 10, 7409941, 15.05.2016, p. 3514-3522.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors with Al2O3 Surface Passivation and Sensing Membrane

AU - Liu, Han Yin

AU - Hsu, Wei Chou

AU - Chen, Wei Fan

AU - Lin, Chih Wei

AU - Li, Yi Ying

AU - Lee, Ching Sung

AU - Sun, Wen Ching

AU - Wei, Sung Yen

AU - Yu, Sheng Min

N1 - Funding Information: This work was supported by the Ministry of Science and Technology, Taiwan, under Contract MOST 103-2221-E-006-238-MY3 and Contract MOST 104-2218-E-035-009.

PY - 2016/5/15

Y1 - 2016/5/15

N2 - This paper demonstrates an AlGaN/GaN ion-sensitive heterostructure field-effect transistors (ISHFETs)-based pH sensors with an aluminum oxide (Al2O3) to serve as a passivation layer and a sensing membrane at the same time. Al2O3 was deposited by the ultrasonic spray pyrolysis deposition (USPD) method. It was found that the ISHFET with Al2O3 showed a higher pH sensitivity of 55.6 mV/pH, a faster response speed of 3 s (from pH 4 to pH 7) and 7 s (from pH 7 to pH 10), a lower hysteresis voltage of 4.3 mV, and a smaller drift rate of 1.25 mV/h (at pH 7) compared with the ISHFET without passivation. In addition, the ISHFET with an Al2O3 passivation layer exhibited significant surface potential variation and low degradation rate. These results suggest that the performance of ISHFET improved using USPD-grown Al2O3.

AB - This paper demonstrates an AlGaN/GaN ion-sensitive heterostructure field-effect transistors (ISHFETs)-based pH sensors with an aluminum oxide (Al2O3) to serve as a passivation layer and a sensing membrane at the same time. Al2O3 was deposited by the ultrasonic spray pyrolysis deposition (USPD) method. It was found that the ISHFET with Al2O3 showed a higher pH sensitivity of 55.6 mV/pH, a faster response speed of 3 s (from pH 4 to pH 7) and 7 s (from pH 7 to pH 10), a lower hysteresis voltage of 4.3 mV, and a smaller drift rate of 1.25 mV/h (at pH 7) compared with the ISHFET without passivation. In addition, the ISHFET with an Al2O3 passivation layer exhibited significant surface potential variation and low degradation rate. These results suggest that the performance of ISHFET improved using USPD-grown Al2O3.

UR - http://www.scopus.com/inward/record.url?scp=84963959570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84963959570&partnerID=8YFLogxK

U2 - 10.1109/JSEN.2016.2531107

DO - 10.1109/JSEN.2016.2531107

M3 - Article

AN - SCOPUS:84963959570

VL - 16

SP - 3514

EP - 3522

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

SN - 1530-437X

IS - 10

M1 - 7409941