Investigation of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using photoelectrochemical oxidation method

Li Hsien Huang, Shu Hao Yeh, Ching Ting Lee, Haipeng Tang, Jennifer Bardwell, James B. Webb

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A photoelectrochemical (PEC) oxidation method was used to directly grow oxide films on AlGaN surface as gate insulator for AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The threshold voltage of MOS-HEMT devices is -5V. The gate leakage current is 50pA and 20pA at forward gate bias of Vgs=10V and reverse gate bias of Vgs= -10V, respectively. Maximum value of gm is 50ms/mm of Vgs biased at -2.09 V.

Original languageEnglish
Title of host publication2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
DOIs
Publication statusPublished - 2007
Event2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM - Seoul, Korea, Republic of
Duration: 2007 Aug 262007 Aug 31

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Other

Other2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
CountryKorea, Republic of
CitySeoul
Period07-08-2607-08-31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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