Investigation of AlGaN/GaN metal-oxidesemiconductor high electron mobility transistors using photoelectrochemical oxidation method

Li Hsien Huang, Shu Hao Yeh, Ching Ting Lee, Haipeng Tang, Jennifer Bardwell, James B. Webb

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A photoelectrochemical (PEC) oxidation method was used to directly grow oxide films on AlGaN surface as gate insulator for AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The threshold voltage of MOS-HEMT devices is -5V. The gate leakage current is 50pA and 20pA at forward gate bias of Vgs=10V and reverse gate bias of Vgs= -10V, respectively. Maximum value of gm is 50ms/mm of Vgs biased at -2.09 V.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
PublisherOptical Society of America
ISBN (Print)1424411742, 9781424411740
Publication statusPublished - 2007
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 - Seoul, Korea, Republic of
Duration: 2007 Aug 262007 Aug 26

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
CountryKorea, Republic of
CitySeoul
Period07-08-2607-08-26

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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