@inproceedings{e8f88f5fbbb2410e89c77d36a04f4b68,
title = "Investigation of AlGaN/GaN metal-oxidesemiconductor high electron mobility transistors using photoelectrochemical oxidation method",
abstract = "A photoelectrochemical (PEC) oxidation method was used to directly grow oxide films on AlGaN surface as gate insulator for AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The threshold voltage of MOS-HEMT devices is -5V. The gate leakage current is 50pA and 20pA at forward gate bias of Vgs=10V and reverse gate bias of Vgs= -10V, respectively. Maximum value of gm is 50ms/mm of Vgs biased at -2.09 V.",
author = "Huang, {Li Hsien} and Yeh, {Shu Hao} and Lee, {Ching Ting} and Haipeng Tang and Jennifer Bardwell and Webb, {James B.}",
year = "2007",
language = "English",
isbn = "1424411742",
series = "Optics InfoBase Conference Papers",
publisher = "Optical Society of America",
booktitle = "Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007",
note = "Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 ; Conference date: 26-08-2007 Through 26-08-2007",
}