Investigation of AlGaN/GaN/AlGaN metal-oxide-semiconductor high electron mobility transistors

Li Hsien Huang, Chien Liang Lu, Ching Ting Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A photoelectrochemical (PEC) oxidation method was used to grow oxide films on AlGaN surface directly as gate insulator for AlGaN/GaN/AlGaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The threshold voltage of AlGaN/GaN/AlGaN MOS-HEMT devices is -3.5 V. The gate leakage current is 1.8×10-5 A at reverse gate bias of V GS= -10 V. Maximum value of gm is 53.8 mS/mm biased at VGS= -0.87 V. The current collapse is not obvious in the MOS-HEMT devices.

Original languageEnglish
Title of host publicationTENCON 2007 - 2007 IEEE Region 10 Conference
DOIs
Publication statusPublished - 2007
EventIEEE Region 10 Conference, TENCON 2007 - Taipei, Taiwan
Duration: 2007 Oct 302007 Nov 2

Other

OtherIEEE Region 10 Conference, TENCON 2007
CountryTaiwan
CityTaipei
Period07-10-3007-11-02

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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