Investigation of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors

Jung Hui Tsai; Shiou Ying Cheng; Wen Shiung Lour; Wen Chau Liu; Hao Hsiung Lin

doi:10.1088/0268-1242/12/9/012

Investigation of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors

Jung Hui Tsai, Shiou Ying Cheng, Wen Shiung Lour, Wen Chau Liu, Hao Hsiung Lin

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

In this paper, the performances of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors including heterostructure-emitter bipolar transistors (HEBT) and superlattice-confinement bipolar transistors (SCBT) are demonstrated. Due to the elimination of the potential spike at the emitter-base junction, extremely low offset voltages of 40 and 80 mV are obtained for the studied HEBT and SCBT respectively. For the HEBT, due to the small hole diffusion length and the large neutral-emitter recombination current, a degraded current gain performance is observed. On the other hand, the SCBT exhibits a large differential current gain of 240 resulting from tunnelling injection which can reduce the spread of thermal distribution and the non-radiative recombination cross-section.

Original language	English
Pages (from-to)	1135-1139
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	12
Issue number	9
DOIs	https://doi.org/10.1088/0268-1242/12/9/012
Publication status	Published - 1997 Sept 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/12/9/012

Cite this

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title = "Investigation of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors",

abstract = "In this paper, the performances of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors including heterostructure-emitter bipolar transistors (HEBT) and superlattice-confinement bipolar transistors (SCBT) are demonstrated. Due to the elimination of the potential spike at the emitter-base junction, extremely low offset voltages of 40 and 80 mV are obtained for the studied HEBT and SCBT respectively. For the HEBT, due to the small hole diffusion length and the large neutral-emitter recombination current, a degraded current gain performance is observed. On the other hand, the SCBT exhibits a large differential current gain of 240 resulting from tunnelling injection which can reduce the spread of thermal distribution and the non-radiative recombination cross-section.",

author = "Tsai, {Jung Hui} and Cheng, {Shiou Ying} and Lour, {Wen Shiung} and Liu, {Wen Chau} and Lin, {Hao Hsiung}",

year = "1997",

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doi = "10.1088/0268-1242/12/9/012",

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T1 - Investigation of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors

AU - Tsai, Jung Hui

AU - Cheng, Shiou Ying

AU - Lour, Wen Shiung

AU - Liu, Wen Chau

AU - Lin, Hao Hsiung

PY - 1997/9/1

Y1 - 1997/9/1

N2 - In this paper, the performances of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors including heterostructure-emitter bipolar transistors (HEBT) and superlattice-confinement bipolar transistors (SCBT) are demonstrated. Due to the elimination of the potential spike at the emitter-base junction, extremely low offset voltages of 40 and 80 mV are obtained for the studied HEBT and SCBT respectively. For the HEBT, due to the small hole diffusion length and the large neutral-emitter recombination current, a degraded current gain performance is observed. On the other hand, the SCBT exhibits a large differential current gain of 240 resulting from tunnelling injection which can reduce the spread of thermal distribution and the non-radiative recombination cross-section.

AB - In this paper, the performances of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors including heterostructure-emitter bipolar transistors (HEBT) and superlattice-confinement bipolar transistors (SCBT) are demonstrated. Due to the elimination of the potential spike at the emitter-base junction, extremely low offset voltages of 40 and 80 mV are obtained for the studied HEBT and SCBT respectively. For the HEBT, due to the small hole diffusion length and the large neutral-emitter recombination current, a degraded current gain performance is observed. On the other hand, the SCBT exhibits a large differential current gain of 240 resulting from tunnelling injection which can reduce the spread of thermal distribution and the non-radiative recombination cross-section.

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Investigation of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors

Abstract

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