The triple-targets magnetron co-sputtering system with three targets of In2O3, Ga2O3, and Zn was used to deposit amorphous indium gallium zinc oxide (a-IGZO) films. The deposited a-IGZO films were used as the channel layers of the transparent thin film transistors (TFTs). The In2O3 RF power of 50 W, Ga2O 3 RF power of 25 W and Zn DC power of 10 W were independently tuned to obtain the optimal composition (In:Ga:Zn} = 3.5:1:2.7) of the a-IGZO films. The effective field-effect mobility, on-to-off current ratio, and subthreshold swing of the optimal a-IGZO TFTs were 62.3 cm2/V·s, 6.5× 106, and 0.23 V/decade, respectively. Using the SiO xpassivation and thermal-annealing treatment, the effective field-effect mobility, on-to-off current ratio, and subthreshold swing of the optimal a-IGZO TFTs were further improved to 68.5 cm2/V·s, 7.0× 106 , and 0.22 V/decade, respectively. In addition, stable performances were also noted.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering