Investigation of amorphous indium gallium zinc oxide thin film transistors grown by triple-targets magnetron co-sputtering

Ching Ting Lee, Yung Hao Lin, Mu Min Chang, Hsin Ying Lee

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Abstract

The triple-targets magnetron co-sputtering system with three targets of In2O3, Ga2O3, and Zn was used to deposit amorphous indium gallium zinc oxide (a-IGZO) films. The deposited a-IGZO films were used as the channel layers of the transparent thin film transistors (TFTs). The In2O3 RF power of 50 W, Ga2O 3 RF power of 25 W and Zn DC power of 10 W were independently tuned to obtain the optimal composition (In:Ga:Zn} = 3.5:1:2.7) of the a-IGZO films. The effective field-effect mobility, on-to-off current ratio, and subthreshold swing of the optimal a-IGZO TFTs were 62.3 cm2/V·s, 6.5× 106, and 0.23 V/decade, respectively. Using the SiO xpassivation and thermal-annealing treatment, the effective field-effect mobility, on-to-off current ratio, and subthreshold swing of the optimal a-IGZO TFTs were further improved to 68.5 cm2/V·s, 7.0× 106 , and 0.22 V/decade, respectively. In addition, stable performances were also noted.

Original languageEnglish
Article number6714407
Pages (from-to)293-298
Number of pages6
JournalIEEE/OSA Journal of Display Technology
Volume10
Issue number4
DOIs
Publication statusPublished - 2014 Apr

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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