TY - JOUR
T1 - Investigation of an AlInAs/GaInAs long-period-superlattice resonant-tunneling transistor
AU - Cheng, Shiou Ying
AU - Liu, Wen Chau
AU - Lin, Wei
N1 - Funding Information:
Acknowledgements--Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC86-2215-E-006-005.
PY - 1997/11
Y1 - 1997/11
N2 - In this article, we will demonstrate a new resonant-tunneling effect of AlInAs/GaInAs long-period-superlattice resonant-tunneling transistors (LPSRTT). First, a theoretical analysis based on the effective mass model with the transfer matrix technique is employed to study the RT effect under different factors such as well width, barrier thickness, and number of periods. Experimentally, at 77 K, the proposed device exhibits significant negative-differential-resistance (NDR) behavior because of the RT through the ground band in the superlattice region. Further, the good transistor performances are obtained both 300 K and 77 K.
AB - In this article, we will demonstrate a new resonant-tunneling effect of AlInAs/GaInAs long-period-superlattice resonant-tunneling transistors (LPSRTT). First, a theoretical analysis based on the effective mass model with the transfer matrix technique is employed to study the RT effect under different factors such as well width, barrier thickness, and number of periods. Experimentally, at 77 K, the proposed device exhibits significant negative-differential-resistance (NDR) behavior because of the RT through the ground band in the superlattice region. Further, the good transistor performances are obtained both 300 K and 77 K.
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U2 - 10.1016/S0038-1101(97)00169-X
DO - 10.1016/S0038-1101(97)00169-X
M3 - Article
AN - SCOPUS:0031274593
SN - 0038-1101
VL - 41
SP - 1707
EP - 1713
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 11
ER -