Investigation of an AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT)

Po Hung Lin; Shiou Ying Cheng; Wen Lung Chang; Hsi Jen Pan; Yung Hsin Shie; Wen Chau Liu; Jung Hui Tsai

doi:10.1016/S0254-0584(98)00193-X

Investigation of an AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT)

Po Hung Lin, Shiou Ying Cheng, Wen Lung Chang, Hsi Jen Pan, Yung Hsin Shie, Wen Chau Liu, Jung Hui Tsai

Research output: Contribution to journal › Article › peer-review

Abstract

A new AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT) structure with a 20-period superlattice confinement layer has been successfully fabricated and demonstrated. In the studied SCEBT, the 20-period AlInAs/GaInAs superlattice confinement layer is employed to provide the electron injection through emitter-base (E-B) homojunction and block the hole back injection from base to emitter. An extremely small offset voltage of 61 mV and the common-emitter current gain about 25 have been obtained at room temperature. From experimental results, it is seen that the potential spike at the effective E-B junction is negligible. So, the proposed device provides a good promise for practical circuit applications.

Original language	English
Pages (from-to)	77-80
Number of pages	4
Journal	Materials Chemistry and Physics
Volume	57
Issue number	1
DOIs	https://doi.org/10.1016/S0254-0584(98)00193-X
Publication status	Published - 1998 Nov 1

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

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@article{611bf751ce1046bb95a3a27f32f12ec5,

title = "Investigation of an AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT)",

abstract = "A new AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT) structure with a 20-period superlattice confinement layer has been successfully fabricated and demonstrated. In the studied SCEBT, the 20-period AlInAs/GaInAs superlattice confinement layer is employed to provide the electron injection through emitter-base (E-B) homojunction and block the hole back injection from base to emitter. An extremely small offset voltage of 61 mV and the common-emitter current gain about 25 have been obtained at room temperature. From experimental results, it is seen that the potential spike at the effective E-B junction is negligible. So, the proposed device provides a good promise for practical circuit applications.",

author = "Lin, {Po Hung} and Cheng, {Shiou Ying} and Chang, {Wen Lung} and Pan, {Hsi Jen} and Shie, {Yung Hsin} and Liu, {Wen Chau} and Tsai, {Jung Hui}",

note = "Funding Information: This study was supported by the National Science Council of the Republic of China under Contract No. NSC 87-2215-E-006-020. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

year = "1998",

month = nov,

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doi = "10.1016/S0254-0584(98)00193-X",

language = "English",

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T1 - Investigation of an AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT)

AU - Lin, Po Hung

AU - Cheng, Shiou Ying

AU - Chang, Wen Lung

AU - Pan, Hsi Jen

AU - Shie, Yung Hsin

AU - Liu, Wen Chau

AU - Tsai, Jung Hui

N1 - Funding Information: This study was supported by the National Science Council of the Republic of China under Contract No. NSC 87-2215-E-006-020. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 1998/11/1

Y1 - 1998/11/1

N2 - A new AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT) structure with a 20-period superlattice confinement layer has been successfully fabricated and demonstrated. In the studied SCEBT, the 20-period AlInAs/GaInAs superlattice confinement layer is employed to provide the electron injection through emitter-base (E-B) homojunction and block the hole back injection from base to emitter. An extremely small offset voltage of 61 mV and the common-emitter current gain about 25 have been obtained at room temperature. From experimental results, it is seen that the potential spike at the effective E-B junction is negligible. So, the proposed device provides a good promise for practical circuit applications.

AB - A new AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT) structure with a 20-period superlattice confinement layer has been successfully fabricated and demonstrated. In the studied SCEBT, the 20-period AlInAs/GaInAs superlattice confinement layer is employed to provide the electron injection through emitter-base (E-B) homojunction and block the hole back injection from base to emitter. An extremely small offset voltage of 61 mV and the common-emitter current gain about 25 have been obtained at room temperature. From experimental results, it is seen that the potential spike at the effective E-B junction is negligible. So, the proposed device provides a good promise for practical circuit applications.

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JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

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