Investigation of an AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT)

Po Hung Lin, Shiou Ying Cheng, Wen Lung Chang, Hsi Jen Pan, Yung Hsin Shie, Wen Chau Liu, Jung Hui Tsai

Research output: Contribution to journalArticlepeer-review

Abstract

A new AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT) structure with a 20-period superlattice confinement layer has been successfully fabricated and demonstrated. In the studied SCEBT, the 20-period AlInAs/GaInAs superlattice confinement layer is employed to provide the electron injection through emitter-base (E-B) homojunction and block the hole back injection from base to emitter. An extremely small offset voltage of 61 mV and the common-emitter current gain about 25 have been obtained at room temperature. From experimental results, it is seen that the potential spike at the effective E-B junction is negligible. So, the proposed device provides a good promise for practical circuit applications.

Original languageEnglish
Pages (from-to)77-80
Number of pages4
JournalMaterials Chemistry and Physics
Volume57
Issue number1
DOIs
Publication statusPublished - 1998 Nov 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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