A new AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT) structure with a 20-period superlattice confinement layer has been successfully fabricated and demonstrated. In the studied SCEBT, the 20-period AlInAs/GaInAs superlattice confinement layer is employed to provide the electron injection through emitter-base (E-B) homojunction and block the hole back injection from base to emitter. An extremely small offset voltage of 61 mV and the common-emitter current gain about 25 have been obtained at room temperature. From experimental results, it is seen that the potential spike at the effective E-B junction is negligible. So, the proposed device provides a good promise for practical circuit applications.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics