Investigation of an AlInAs/GaInAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

Shiou Ying Cheng; Wen Lung Chang; Wen Chau Liu; Wei Lin

doi:10.1006/spmi.1997.0465

Investigation of an AlInAs/GaInAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

Shiou Ying Cheng, Wen Lung Chang, Wen Chau Liu, Wei Lin

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A new bipolar transistor with a 20-period i-AlInAs/n⁺-InGaAs superlattice, prepared by metal organic chemical vapour deposition, has been fabricated and demonstrated. This superlattice is used as a confinement barrier for holes and a resonant tunneling (RT) route for electrons. Due to the RT effect within the 20-period superlattice near emitter-base p-n junction region, the N-shaped negative-differential-resistance (NDR) phenomena are observed under normal operation. A transistor action with a common-emitter current gain of 13 and a small offset voltage (≃90 mV) is achieved at room temperature.

Original language	English
Pages (from-to)	541-549
Number of pages	9
Journal	Superlattices and Microstructures
Volume	22
Issue number	4
DOIs	https://doi.org/10.1006/spmi.1997.0465
Publication status	Published - 1997 Dec

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.1997.0465

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title = "Investigation of an AlInAs/GaInAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)",

abstract = "A new bipolar transistor with a 20-period i-AlInAs/n+-InGaAs superlattice, prepared by metal organic chemical vapour deposition, has been fabricated and demonstrated. This superlattice is used as a confinement barrier for holes and a resonant tunneling (RT) route for electrons. Due to the RT effect within the 20-period superlattice near emitter-base p-n junction region, the N-shaped negative-differential-resistance (NDR) phenomena are observed under normal operation. A transistor action with a common-emitter current gain of 13 and a small offset voltage (≃90 mV) is achieved at room temperature.",

author = "Cheng, {Shiou Ying} and Chang, {Wen Lung} and Liu, {Wen Chau} and Wei Lin",

note = "Funding Information: Acknowledgements—This study was supported by the National Science Council of the Republic of China under Contract NSC.87-2215-E-006-020.",

year = "1997",

month = dec,

doi = "10.1006/spmi.1997.0465",

language = "English",

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T1 - Investigation of an AlInAs/GaInAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

AU - Cheng, Shiou Ying

AU - Chang, Wen Lung

AU - Liu, Wen Chau

AU - Lin, Wei

N1 - Funding Information: Acknowledgements—This study was supported by the National Science Council of the Republic of China under Contract NSC.87-2215-E-006-020.

PY - 1997/12

Y1 - 1997/12

N2 - A new bipolar transistor with a 20-period i-AlInAs/n+-InGaAs superlattice, prepared by metal organic chemical vapour deposition, has been fabricated and demonstrated. This superlattice is used as a confinement barrier for holes and a resonant tunneling (RT) route for electrons. Due to the RT effect within the 20-period superlattice near emitter-base p-n junction region, the N-shaped negative-differential-resistance (NDR) phenomena are observed under normal operation. A transistor action with a common-emitter current gain of 13 and a small offset voltage (≃90 mV) is achieved at room temperature.

AB - A new bipolar transistor with a 20-period i-AlInAs/n+-InGaAs superlattice, prepared by metal organic chemical vapour deposition, has been fabricated and demonstrated. This superlattice is used as a confinement barrier for holes and a resonant tunneling (RT) route for electrons. Due to the RT effect within the 20-period superlattice near emitter-base p-n junction region, the N-shaped negative-differential-resistance (NDR) phenomena are observed under normal operation. A transistor action with a common-emitter current gain of 13 and a small offset voltage (≃90 mV) is achieved at room temperature.

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JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4

ER -

Investigation of an AlInAs/GaInAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

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