Investigation of an AlInAs/GaInAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

Shiou Ying Cheng, Wen Lung Chang, Wen Chau Liu, Wei Lin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A new bipolar transistor with a 20-period i-AlInAs/n+-InGaAs superlattice, prepared by metal organic chemical vapour deposition, has been fabricated and demonstrated. This superlattice is used as a confinement barrier for holes and a resonant tunneling (RT) route for electrons. Due to the RT effect within the 20-period superlattice near emitter-base p-n junction region, the N-shaped negative-differential-resistance (NDR) phenomena are observed under normal operation. A transistor action with a common-emitter current gain of 13 and a small offset voltage (≃90 mV) is achieved at room temperature.

Original languageEnglish
Pages (from-to)541-549
Number of pages9
JournalSuperlattices and Microstructures
Volume22
Issue number4
DOIs
Publication statusPublished - 1997 Dec

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Investigation of an AlInAs/GaInAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)'. Together they form a unique fingerprint.

  • Cite this