Abstract
A GaAsInGaAs doped-channel MIS-like pseudomorphic FET has been fabricated and investigated. The device under study shows advantages of high breakdown voltage, high current capability, very large gate voltage swing for high transconductance operations, and ease of fabrication. For a 2 × 100 μm2 gate device, a breakdown voltage of 17.4 V, a maximum drain saturation current of 930 mA/mm, a maximum transconductance of 230 mS/mm, and a very broad gate voltage range larger than 3 V with the transconductance higher than 200 mS/mm are obtained. An estimated electron saturation velocity vs up to 2.2 × 107 cm/s is acquired even for a thin InGaAs channel layer with a 4 × 1018 cm-3 doping level. A simple two-layer model is also proposed to study the theoretical properties which shows a good agreement with the experimental results. Consequently, the device demonstrates a good potential for use in high-speed, high power and large input signal circuit applications.
| Original language | English |
|---|---|
| Pages (from-to) | 1747-1753 |
| Number of pages | 7 |
| Journal | Solid State Electronics |
| Volume | 38 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1995 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
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Investigation of an InGaAsGaAs doped-channel MIS-like pseudomorphic transistor. / Laih, Lih Wen; Tsai, Jung Hui; Liu, Wen-Chau; Hsu, Wei-Chou; Lour, Wen Shiung.
In: Solid State Electronics, Vol. 38, No. 10, 01.01.1995, p. 1747-1753.Research output: Contribution to journal › Article
TY - JOUR
T1 - Investigation of an InGaAsGaAs doped-channel MIS-like pseudomorphic transistor
AU - Laih, Lih Wen
AU - Tsai, Jung Hui
AU - Liu, Wen-Chau
AU - Hsu, Wei-Chou
AU - Lour, Wen Shiung
PY - 1995/1/1
Y1 - 1995/1/1
N2 - A GaAsInGaAs doped-channel MIS-like pseudomorphic FET has been fabricated and investigated. The device under study shows advantages of high breakdown voltage, high current capability, very large gate voltage swing for high transconductance operations, and ease of fabrication. For a 2 × 100 μm2 gate device, a breakdown voltage of 17.4 V, a maximum drain saturation current of 930 mA/mm, a maximum transconductance of 230 mS/mm, and a very broad gate voltage range larger than 3 V with the transconductance higher than 200 mS/mm are obtained. An estimated electron saturation velocity vs up to 2.2 × 107 cm/s is acquired even for a thin InGaAs channel layer with a 4 × 1018 cm-3 doping level. A simple two-layer model is also proposed to study the theoretical properties which shows a good agreement with the experimental results. Consequently, the device demonstrates a good potential for use in high-speed, high power and large input signal circuit applications.
AB - A GaAsInGaAs doped-channel MIS-like pseudomorphic FET has been fabricated and investigated. The device under study shows advantages of high breakdown voltage, high current capability, very large gate voltage swing for high transconductance operations, and ease of fabrication. For a 2 × 100 μm2 gate device, a breakdown voltage of 17.4 V, a maximum drain saturation current of 930 mA/mm, a maximum transconductance of 230 mS/mm, and a very broad gate voltage range larger than 3 V with the transconductance higher than 200 mS/mm are obtained. An estimated electron saturation velocity vs up to 2.2 × 107 cm/s is acquired even for a thin InGaAs channel layer with a 4 × 1018 cm-3 doping level. A simple two-layer model is also proposed to study the theoretical properties which shows a good agreement with the experimental results. Consequently, the device demonstrates a good potential for use in high-speed, high power and large input signal circuit applications.
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U2 - 10.1016/0038-1101(95)00009-I
DO - 10.1016/0038-1101(95)00009-I
M3 - Article
AN - SCOPUS:0029391954
VL - 38
SP - 1747
EP - 1753
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 10
ER -