Investigation of an InGaAsGaAs doped-channel MIS-like pseudomorphic transistor

Lih Wen Laih, Jung Hui Tsai, Wen-Chau Liu, Wei-Chou Hsu, Wen Shiung Lour

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A GaAsInGaAs doped-channel MIS-like pseudomorphic FET has been fabricated and investigated. The device under study shows advantages of high breakdown voltage, high current capability, very large gate voltage swing for high transconductance operations, and ease of fabrication. For a 2 × 100 μm2 gate device, a breakdown voltage of 17.4 V, a maximum drain saturation current of 930 mA/mm, a maximum transconductance of 230 mS/mm, and a very broad gate voltage range larger than 3 V with the transconductance higher than 200 mS/mm are obtained. An estimated electron saturation velocity vs up to 2.2 × 107 cm/s is acquired even for a thin InGaAs channel layer with a 4 × 1018 cm-3 doping level. A simple two-layer model is also proposed to study the theoretical properties which shows a good agreement with the experimental results. Consequently, the device demonstrates a good potential for use in high-speed, high power and large input signal circuit applications.

Original languageEnglish
Pages (from-to)1747-1753
Number of pages7
JournalSolid State Electronics
Volume38
Issue number10
DOIs
Publication statusPublished - 1995 Jan 1

Fingerprint

Management information systems
Transconductance
MIS (semiconductors)
transconductance
Transistors
transistors
Electric breakdown
electrical faults
saturation
Electric potential
electric potential
Field effect transistors
high current
field effect transistors
Doping (additives)
high speed
Fabrication
fabrication
Electrons
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Laih, Lih Wen ; Tsai, Jung Hui ; Liu, Wen-Chau ; Hsu, Wei-Chou ; Lour, Wen Shiung. / Investigation of an InGaAsGaAs doped-channel MIS-like pseudomorphic transistor. In: Solid State Electronics. 1995 ; Vol. 38, No. 10. pp. 1747-1753.
@article{828f33f3f4a34e9688f493d706cd4999,
title = "Investigation of an InGaAsGaAs doped-channel MIS-like pseudomorphic transistor",
abstract = "A GaAsInGaAs doped-channel MIS-like pseudomorphic FET has been fabricated and investigated. The device under study shows advantages of high breakdown voltage, high current capability, very large gate voltage swing for high transconductance operations, and ease of fabrication. For a 2 × 100 μm2 gate device, a breakdown voltage of 17.4 V, a maximum drain saturation current of 930 mA/mm, a maximum transconductance of 230 mS/mm, and a very broad gate voltage range larger than 3 V with the transconductance higher than 200 mS/mm are obtained. An estimated electron saturation velocity vs up to 2.2 × 107 cm/s is acquired even for a thin InGaAs channel layer with a 4 × 1018 cm-3 doping level. A simple two-layer model is also proposed to study the theoretical properties which shows a good agreement with the experimental results. Consequently, the device demonstrates a good potential for use in high-speed, high power and large input signal circuit applications.",
author = "Laih, {Lih Wen} and Tsai, {Jung Hui} and Wen-Chau Liu and Wei-Chou Hsu and Lour, {Wen Shiung}",
year = "1995",
month = "1",
day = "1",
doi = "10.1016/0038-1101(95)00009-I",
language = "English",
volume = "38",
pages = "1747--1753",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "10",

}

Investigation of an InGaAsGaAs doped-channel MIS-like pseudomorphic transistor. / Laih, Lih Wen; Tsai, Jung Hui; Liu, Wen-Chau; Hsu, Wei-Chou; Lour, Wen Shiung.

In: Solid State Electronics, Vol. 38, No. 10, 01.01.1995, p. 1747-1753.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of an InGaAsGaAs doped-channel MIS-like pseudomorphic transistor

AU - Laih, Lih Wen

AU - Tsai, Jung Hui

AU - Liu, Wen-Chau

AU - Hsu, Wei-Chou

AU - Lour, Wen Shiung

PY - 1995/1/1

Y1 - 1995/1/1

N2 - A GaAsInGaAs doped-channel MIS-like pseudomorphic FET has been fabricated and investigated. The device under study shows advantages of high breakdown voltage, high current capability, very large gate voltage swing for high transconductance operations, and ease of fabrication. For a 2 × 100 μm2 gate device, a breakdown voltage of 17.4 V, a maximum drain saturation current of 930 mA/mm, a maximum transconductance of 230 mS/mm, and a very broad gate voltage range larger than 3 V with the transconductance higher than 200 mS/mm are obtained. An estimated electron saturation velocity vs up to 2.2 × 107 cm/s is acquired even for a thin InGaAs channel layer with a 4 × 1018 cm-3 doping level. A simple two-layer model is also proposed to study the theoretical properties which shows a good agreement with the experimental results. Consequently, the device demonstrates a good potential for use in high-speed, high power and large input signal circuit applications.

AB - A GaAsInGaAs doped-channel MIS-like pseudomorphic FET has been fabricated and investigated. The device under study shows advantages of high breakdown voltage, high current capability, very large gate voltage swing for high transconductance operations, and ease of fabrication. For a 2 × 100 μm2 gate device, a breakdown voltage of 17.4 V, a maximum drain saturation current of 930 mA/mm, a maximum transconductance of 230 mS/mm, and a very broad gate voltage range larger than 3 V with the transconductance higher than 200 mS/mm are obtained. An estimated electron saturation velocity vs up to 2.2 × 107 cm/s is acquired even for a thin InGaAs channel layer with a 4 × 1018 cm-3 doping level. A simple two-layer model is also proposed to study the theoretical properties which shows a good agreement with the experimental results. Consequently, the device demonstrates a good potential for use in high-speed, high power and large input signal circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=0029391954&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029391954&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(95)00009-I

DO - 10.1016/0038-1101(95)00009-I

M3 - Article

AN - SCOPUS:0029391954

VL - 38

SP - 1747

EP - 1753

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 10

ER -