Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT)

Shiou Ying Cheng, Jung Hui Tsai, Wen Lung Chang, Hsi Jen Pan, Yung Hsin Shie, Wen-Chau Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A new InGaP/GaAs resonant-tunneling transistor (RTT) has been fabricated successfully and demonstrated. A 5-period InGaP/GaAs superlattice is used as a confinement barrier for holes and an RT route for electrons. A transistor action with a common-emitter current gain up to 220 and an offset voltage of 85 mV are obtained. Due to the RT effect within the 5-period superlattice near the emitter-base p-n junction region, the N-shaped negative-differential-resistance (NDR) phenomena are observed at room temperature. Furthermore, the N-shaped NDR is found both in the saturation and forward-active region. The widely operating regime of NDR may provide the potential for practical applications.

Original languageEnglish
Pages (from-to)755-760
Number of pages6
JournalSolid-State Electronics
Volume43
Issue number4
DOIs
Publication statusPublished - 1999 Jan 1

Fingerprint

Resonant tunneling
resonant tunneling
Transistors
transistors
emitters
p-n junctions
Electrons
Electric potential
routes
saturation
electric potential
room temperature
Temperature
gallium arsenide
electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Cheng, Shiou Ying ; Tsai, Jung Hui ; Chang, Wen Lung ; Pan, Hsi Jen ; Shie, Yung Hsin ; Liu, Wen-Chau. / Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT). In: Solid-State Electronics. 1999 ; Vol. 43, No. 4. pp. 755-760.
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Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT). / Cheng, Shiou Ying; Tsai, Jung Hui; Chang, Wen Lung; Pan, Hsi Jen; Shie, Yung Hsin; Liu, Wen-Chau.

In: Solid-State Electronics, Vol. 43, No. 4, 01.01.1999, p. 755-760.

Research output: Contribution to journalArticle

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T1 - Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT)

AU - Cheng, Shiou Ying

AU - Tsai, Jung Hui

AU - Chang, Wen Lung

AU - Pan, Hsi Jen

AU - Shie, Yung Hsin

AU - Liu, Wen-Chau

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AB - A new InGaP/GaAs resonant-tunneling transistor (RTT) has been fabricated successfully and demonstrated. A 5-period InGaP/GaAs superlattice is used as a confinement barrier for holes and an RT route for electrons. A transistor action with a common-emitter current gain up to 220 and an offset voltage of 85 mV are obtained. Due to the RT effect within the 5-period superlattice near the emitter-base p-n junction region, the N-shaped negative-differential-resistance (NDR) phenomena are observed at room temperature. Furthermore, the N-shaped NDR is found both in the saturation and forward-active region. The widely operating regime of NDR may provide the potential for practical applications.

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