Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT)

Shiou Ying Cheng, Jung Hui Tsai, Wen Lung Chang, Hsi Jen Pan, Yung Hsin Shie, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A new InGaP/GaAs resonant-tunneling transistor (RTT) has been fabricated successfully and demonstrated. A 5-period InGaP/GaAs superlattice is used as a confinement barrier for holes and an RT route for electrons. A transistor action with a common-emitter current gain up to 220 and an offset voltage of 85 mV are obtained. Due to the RT effect within the 5-period superlattice near the emitter-base p-n junction region, the N-shaped negative-differential-resistance (NDR) phenomena are observed at room temperature. Furthermore, the N-shaped NDR is found both in the saturation and forward-active region. The widely operating regime of NDR may provide the potential for practical applications.

Original languageEnglish
Pages (from-to)755-760
Number of pages6
JournalSolid-State Electronics
Issue number4
Publication statusPublished - 1999 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT)'. Together they form a unique fingerprint.

Cite this