Investigation of Au/Ti/Al ohmic contact to N-type 4H-SiC

Shu Cheng Chang, Shui-Jinn Wang, Kai Ming Uang, Bor Wen Liou

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

In this study, investigation on Au/Ti/Al ohmic contact to n-type 4H-SiC and its thermal stability are reported. Specific contact resistances (SCRs) in the range of 10-4-10-6 Ω cm2, and the best SCR as low as 2.8 × 10-6 Ω cm2 has been generally achieved after rapid thermal annealing in Ar for 5 min at 800 °C and above. About 1-2 order(s) of magnitude improvement in SCR as compared to those Al/Ti series ohmic systems in n-SiC reported in literature is obtained. XRD analysis shows that the low resistance contact would be attributed to the formation of titanium silicides (TiSi2 and TiSi) and Ti 3SiC2 at the metal/n-SiC interface after thermal annealing. The Au/Ti/Al ohmic contact is thermally stable during thermal aging treatment in Ar at temperature in the 100-500 °C range for 20 h.

Original languageEnglish
Pages (from-to)1937-1941
Number of pages5
JournalSolid-State Electronics
Volume49
Issue number12
DOIs
Publication statusPublished - 2005 Dec 1

Fingerprint

Ohmic contacts
Contact resistance
contact resistance
electric contacts
annealing
silicides
low resistance
Silicides
Thermal aging
Rapid thermal annealing
thermal stability
titanium
Titanium
Thermodynamic stability
Metals
Annealing
metals
temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Chang, Shu Cheng ; Wang, Shui-Jinn ; Uang, Kai Ming ; Liou, Bor Wen. / Investigation of Au/Ti/Al ohmic contact to N-type 4H-SiC. In: Solid-State Electronics. 2005 ; Vol. 49, No. 12. pp. 1937-1941.
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abstract = "In this study, investigation on Au/Ti/Al ohmic contact to n-type 4H-SiC and its thermal stability are reported. Specific contact resistances (SCRs) in the range of 10-4-10-6 Ω cm2, and the best SCR as low as 2.8 × 10-6 Ω cm2 has been generally achieved after rapid thermal annealing in Ar for 5 min at 800 °C and above. About 1-2 order(s) of magnitude improvement in SCR as compared to those Al/Ti series ohmic systems in n-SiC reported in literature is obtained. XRD analysis shows that the low resistance contact would be attributed to the formation of titanium silicides (TiSi2 and TiSi) and Ti 3SiC2 at the metal/n-SiC interface after thermal annealing. The Au/Ti/Al ohmic contact is thermally stable during thermal aging treatment in Ar at temperature in the 100-500 °C range for 20 h.",
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Investigation of Au/Ti/Al ohmic contact to N-type 4H-SiC. / Chang, Shu Cheng; Wang, Shui-Jinn; Uang, Kai Ming; Liou, Bor Wen.

In: Solid-State Electronics, Vol. 49, No. 12, 01.12.2005, p. 1937-1941.

Research output: Contribution to journalArticle

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T1 - Investigation of Au/Ti/Al ohmic contact to N-type 4H-SiC

AU - Chang, Shu Cheng

AU - Wang, Shui-Jinn

AU - Uang, Kai Ming

AU - Liou, Bor Wen

PY - 2005/12/1

Y1 - 2005/12/1

N2 - In this study, investigation on Au/Ti/Al ohmic contact to n-type 4H-SiC and its thermal stability are reported. Specific contact resistances (SCRs) in the range of 10-4-10-6 Ω cm2, and the best SCR as low as 2.8 × 10-6 Ω cm2 has been generally achieved after rapid thermal annealing in Ar for 5 min at 800 °C and above. About 1-2 order(s) of magnitude improvement in SCR as compared to those Al/Ti series ohmic systems in n-SiC reported in literature is obtained. XRD analysis shows that the low resistance contact would be attributed to the formation of titanium silicides (TiSi2 and TiSi) and Ti 3SiC2 at the metal/n-SiC interface after thermal annealing. The Au/Ti/Al ohmic contact is thermally stable during thermal aging treatment in Ar at temperature in the 100-500 °C range for 20 h.

AB - In this study, investigation on Au/Ti/Al ohmic contact to n-type 4H-SiC and its thermal stability are reported. Specific contact resistances (SCRs) in the range of 10-4-10-6 Ω cm2, and the best SCR as low as 2.8 × 10-6 Ω cm2 has been generally achieved after rapid thermal annealing in Ar for 5 min at 800 °C and above. About 1-2 order(s) of magnitude improvement in SCR as compared to those Al/Ti series ohmic systems in n-SiC reported in literature is obtained. XRD analysis shows that the low resistance contact would be attributed to the formation of titanium silicides (TiSi2 and TiSi) and Ti 3SiC2 at the metal/n-SiC interface after thermal annealing. The Au/Ti/Al ohmic contact is thermally stable during thermal aging treatment in Ar at temperature in the 100-500 °C range for 20 h.

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