Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

Yen Lin Tsai, Jone F. Chen, Shang Feng Shen, Hao Tang Hsu, Chia Yu Kao, Kuei Fen Chang, Hann Ping Hwang

Research output: Contribution to journalArticlepeer-review

Abstract

The effect of doping concentration in the n- drift region on the characteristics and hot-carrier reliability in high-voltage n-type MOS transistors is investigated. Results show that a proper increase in the n- drift doping concentration improves device characteristics. In addition, a proper increase in the n- drift doping concentration reduces hot-carrier induced device degradation. Technology computer-aided design simulation results suggest that the impact of hot-carrier induced interface charge generation on device degradation is alleviated for a higher n- drift doping concentration. Such a result can explain the reduction in hot-carrier induced device degradation for the device with a higher doping concentration in the n- drift region.

Original languageEnglish
Article number125019
JournalSemiconductor Science and Technology
Volume33
Issue number12
DOIs
Publication statusPublished - 2018 Nov 13

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region'. Together they form a unique fingerprint.

Cite this