Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

Yen Lin Tsai; Jone F. Chen; Shang Feng Shen; Hao Tang Hsu; Chia Yu Kao; Kuei Fen Chang; Hann Ping Hwang

doi:10.1088/1361-6641/aaeb06

Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

Yen Lin Tsai, Jone F. Chen, Shang Feng Shen, Hao Tang Hsu, Chia Yu Kao, Kuei Fen Chang, Hann Ping Hwang

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The effect of doping concentration in the n^- drift region on the characteristics and hot-carrier reliability in high-voltage n-type MOS transistors is investigated. Results show that a proper increase in the n^- drift doping concentration improves device characteristics. In addition, a proper increase in the n^- drift doping concentration reduces hot-carrier induced device degradation. Technology computer-aided design simulation results suggest that the impact of hot-carrier induced interface charge generation on device degradation is alleviated for a higher n^- drift doping concentration. Such a result can explain the reduction in hot-carrier induced device degradation for the device with a higher doping concentration in the n^- drift region.

Original language	English
Article number	125019
Journal	Semiconductor Science and Technology
Volume	33
Issue number	12
DOIs	https://doi.org/10.1088/1361-6641/aaeb06
Publication status	Published - 2018 Nov 13

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/1361-6641/aaeb06

Cite this

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title = "Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region",

abstract = "The effect of doping concentration in the n- drift region on the characteristics and hot-carrier reliability in high-voltage n-type MOS transistors is investigated. Results show that a proper increase in the n- drift doping concentration improves device characteristics. In addition, a proper increase in the n- drift doping concentration reduces hot-carrier induced device degradation. Technology computer-aided design simulation results suggest that the impact of hot-carrier induced interface charge generation on device degradation is alleviated for a higher n- drift doping concentration. Such a result can explain the reduction in hot-carrier induced device degradation for the device with a higher doping concentration in the n- drift region.",

author = "Tsai, {Yen Lin} and Chen, {Jone F.} and Shen, {Shang Feng} and Hsu, {Hao Tang} and Kao, {Chia Yu} and Chang, {Kuei Fen} and Hwang, {Hann Ping}",

note = "Funding Information: The authors are grateful to the National Center for High-Performance Computing for providing computer time and facilities. This work was supported in part by the Ministry of Science and Technology under Contract No. MOST 107-2221-E-006-158. Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",

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doi = "10.1088/1361-6641/aaeb06",

language = "English",

volume = "33",

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T1 - Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

AU - Tsai, Yen Lin

AU - Chen, Jone F.

AU - Shen, Shang Feng

AU - Hsu, Hao Tang

AU - Kao, Chia Yu

AU - Chang, Kuei Fen

AU - Hwang, Hann Ping

N1 - Funding Information: The authors are grateful to the National Center for High-Performance Computing for providing computer time and facilities. This work was supported in part by the Ministry of Science and Technology under Contract No. MOST 107-2221-E-006-158. Publisher Copyright: © 2018 IOP Publishing Ltd.

PY - 2018/11/13

Y1 - 2018/11/13

N2 - The effect of doping concentration in the n- drift region on the characteristics and hot-carrier reliability in high-voltage n-type MOS transistors is investigated. Results show that a proper increase in the n- drift doping concentration improves device characteristics. In addition, a proper increase in the n- drift doping concentration reduces hot-carrier induced device degradation. Technology computer-aided design simulation results suggest that the impact of hot-carrier induced interface charge generation on device degradation is alleviated for a higher n- drift doping concentration. Such a result can explain the reduction in hot-carrier induced device degradation for the device with a higher doping concentration in the n- drift region.

AB - The effect of doping concentration in the n- drift region on the characteristics and hot-carrier reliability in high-voltage n-type MOS transistors is investigated. Results show that a proper increase in the n- drift doping concentration improves device characteristics. In addition, a proper increase in the n- drift doping concentration reduces hot-carrier induced device degradation. Technology computer-aided design simulation results suggest that the impact of hot-carrier induced interface charge generation on device degradation is alleviated for a higher n- drift doping concentration. Such a result can explain the reduction in hot-carrier induced device degradation for the device with a higher doping concentration in the n- drift region.

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Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

Abstract

All Science Journal Classification (ASJC) codes

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