Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

Yen Lin Tsai, Jone-Fang Chen, Shang Feng Shen, Hao Tang Hsu, Chia Yu Kao, Kuei Fen Chang, Hann Ping Hwang

Research output: Contribution to journalArticle

Abstract

The effect of doping concentration in the n - drift region on the characteristics and hot-carrier reliability in high-voltage n-type MOS transistors is investigated. Results show that a proper increase in the n - drift doping concentration improves device characteristics. In addition, a proper increase in the n - drift doping concentration reduces hot-carrier induced device degradation. Technology computer-aided design simulation results suggest that the impact of hot-carrier induced interface charge generation on device degradation is alleviated for a higher n - drift doping concentration. Such a result can explain the reduction in hot-carrier induced device degradation for the device with a higher doping concentration in the n - drift region.

Original languageEnglish
Article number125019
JournalSemiconductor Science and Technology
Volume33
Issue number12
DOIs
Publication statusPublished - 2018 Nov 13

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Hot carriers
MOSFET devices
high voltages
transistors
Doping (additives)
Electric potential
degradation
Degradation
computer aided design
Computer aided design
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Tsai, Yen Lin ; Chen, Jone-Fang ; Shen, Shang Feng ; Hsu, Hao Tang ; Kao, Chia Yu ; Chang, Kuei Fen ; Hwang, Hann Ping. / Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region. In: Semiconductor Science and Technology. 2018 ; Vol. 33, No. 12.
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Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region. / Tsai, Yen Lin; Chen, Jone-Fang; Shen, Shang Feng; Hsu, Hao Tang; Kao, Chia Yu; Chang, Kuei Fen; Hwang, Hann Ping.

In: Semiconductor Science and Technology, Vol. 33, No. 12, 125019, 13.11.2018.

Research output: Contribution to journalArticle

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AU - Tsai, Yen Lin

AU - Chen, Jone-Fang

AU - Shen, Shang Feng

AU - Hsu, Hao Tang

AU - Kao, Chia Yu

AU - Chang, Kuei Fen

AU - Hwang, Hann Ping

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