TY - JOUR
T1 - Investigation of conductive mechanism of amorphous IGO resistive random-access memory with different top electrode metal
AU - Huang, Wei Lun
AU - Lin, Yong Zhe
AU - Chang, Sheng Po
AU - Chang, Shoou Jinn
N1 - Publisher Copyright:
© 2020 by the authors.
PY - 2020/5/1
Y1 - 2020/5/1
N2 - In this paper, resistive random-access memory (RRAM) with InGaO (IGO) as an active layer was fabricated by radio-frequency (RF) sputtering system and the resistive switching mechanism with the different top electrode (TE) of Pt, Ti, and Al were investigated. The Pt/IGO/Pt/Ti RRAM exhibits typical bipolar resistive switching features with an average set voltage of 1.73 V, average reset voltage of-0.60 V, average high resistance state (HRS) of 54,954.09 W, and the average low resistance state (LRS) of 64.97 W, respectively. Ti and Al were substituted for Pt as TE, and the conductive mechanism was different from TE of Pt. When Ti and Al were deposited onto the switching layer, both TE of Ti and Al will form oxidation of TiOx and AlOx because of their high activity to oxygen. The oxidation will have different effects on the forming of filaments, which may further affect the RRAM performance. The details of different mechanisms caused by different TE will be discussed. In brief, IGO is an excellent candidate for the RRAM device and with the aids of TiOx, the set voltage, and reset voltage, HRS and LRS become much more stable.
AB - In this paper, resistive random-access memory (RRAM) with InGaO (IGO) as an active layer was fabricated by radio-frequency (RF) sputtering system and the resistive switching mechanism with the different top electrode (TE) of Pt, Ti, and Al were investigated. The Pt/IGO/Pt/Ti RRAM exhibits typical bipolar resistive switching features with an average set voltage of 1.73 V, average reset voltage of-0.60 V, average high resistance state (HRS) of 54,954.09 W, and the average low resistance state (LRS) of 64.97 W, respectively. Ti and Al were substituted for Pt as TE, and the conductive mechanism was different from TE of Pt. When Ti and Al were deposited onto the switching layer, both TE of Ti and Al will form oxidation of TiOx and AlOx because of their high activity to oxygen. The oxidation will have different effects on the forming of filaments, which may further affect the RRAM performance. The details of different mechanisms caused by different TE will be discussed. In brief, IGO is an excellent candidate for the RRAM device and with the aids of TiOx, the set voltage, and reset voltage, HRS and LRS become much more stable.
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U2 - 10.3390/COATINGS10050504
DO - 10.3390/COATINGS10050504
M3 - Article
AN - SCOPUS:85086653454
SN - 2079-6412
VL - 10
JO - Coatings
JF - Coatings
IS - 5
M1 - 504
ER -