Investigation of discrete dopant induced variability in silicon nanowire MOSFETs using 3D simulation

Engineering & Materials Science

• Nanowires 100%
• Doping (additives) 89%
• Silicon 63%
• Threshold voltage 44%
• Leakage currents 21%
• Field effect transistors 21%
• Transistors 17%
• Computer simulation 11%

Physics & Astronomy

• nanowires 64%
• field effect transistors 63%
• threshold voltage 50%
• silicon 43%
• simulation 30%
• leakage 22%
• transistors 21%
• thresholds 16%
• output 15%

Chemical Compounds

• Doping Material 70%
• Nanowire 69%
• Simulation 51%
• Voltage 38%
• Leakage Current 35%
• Sphere 22%