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Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors
Hsin Ying Lee
, Iang Jeng Lin
, Hir Ming Shieh
,
Ching Ting Lee
Department of Photonics
Research output
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Contribution to journal
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Article
›
peer-review
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Keyphrases
Delta Doping
100%
Depositional System
33%
Double delta
100%
Epitaxial Layers
33%
Field-effect Transistors
100%
GaAs Substrate
33%
Gallium Arsenide
100%
High-frequency Response
33%
InGaAs
100%
Laser Beams
100%
Low Pressure
33%
Metal-organic Chemical Vapor Deposition (MOCVD)
33%
Semi-insulating GaAs
33%
Engineering
Chemical Vapor Deposition
33%
Deposition System
33%
Epitaxial Film
33%
Field-Effect Transistor
100%
Frequency Response
33%
Gaas Substrate
33%
Gallium Arsenide
100%
Indium Gallium Arsenide
100%
Laser Beam
100%
Vapor Deposition
33%
Material Science
Chemical Vapor Deposition
33%
Epitaxial Film
33%
Field Effect Transistor
100%
Gallium Arsenide
100%
Indium Gallium Arsenide
100%