Investigation of electrical and photoluminescent properties of MBE-grown AlxGa1-xAs layers

W. C. Liu

doi:10.1007/BF01045382

Investigation of electrical and photoluminescent properties of MBE-grown Al_xGa_1-xAs layers

W. C. Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The electrical and photoluminescent (PL) properties of Al_xGa{1-x}As layers grown by MBE have been investigated. Some experimental factors, e.g. vacuum conditions, substrate growth temperature and As/group-III flux ratio, have been considered. Undoped AlGaAs layers exhibit slight p-type characteristics due to C accepters and its concentration is lower than 10¹⁵cm^-3. Both n- and p-type AlGaAs layers achieve semi-insulated high resistance when the substrate temperature is lower than 580° C. The experimental results are comparable to other reports. In summary, the excellent vacuum environment, higher substrate temperature (T_s>580° C) and lower As/group-III flux ratio are the necessary conditions for growing high quality Al_xGa_1-xAs layers.

Original language	English
Pages (from-to)	1765-1772
Number of pages	8
Journal	Journal of Materials Science
Volume	25
Issue number	3
DOIs	https://doi.org/10.1007/BF01045382
Publication status	Published - 1990 Mar

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1007/BF01045382

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abstract = "The electrical and photoluminescent (PL) properties of AlxGa{1-x}As layers grown by MBE have been investigated. Some experimental factors, e.g. vacuum conditions, substrate growth temperature and As/group-III flux ratio, have been considered. Undoped AlGaAs layers exhibit slight p-type characteristics due to C accepters and its concentration is lower than 1015cm-3. Both n- and p-type AlGaAs layers achieve semi-insulated high resistance when the substrate temperature is lower than 580° C. The experimental results are comparable to other reports. In summary, the excellent vacuum environment, higher substrate temperature (Ts>580° C) and lower As/group-III flux ratio are the necessary conditions for growing high quality AlxGa1-xAs layers.",

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AU - Liu, W. C.

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N2 - The electrical and photoluminescent (PL) properties of AlxGa{1-x}As layers grown by MBE have been investigated. Some experimental factors, e.g. vacuum conditions, substrate growth temperature and As/group-III flux ratio, have been considered. Undoped AlGaAs layers exhibit slight p-type characteristics due to C accepters and its concentration is lower than 1015cm-3. Both n- and p-type AlGaAs layers achieve semi-insulated high resistance when the substrate temperature is lower than 580° C. The experimental results are comparable to other reports. In summary, the excellent vacuum environment, higher substrate temperature (Ts>580° C) and lower As/group-III flux ratio are the necessary conditions for growing high quality AlxGa1-xAs layers.

AB - The electrical and photoluminescent (PL) properties of AlxGa{1-x}As layers grown by MBE have been investigated. Some experimental factors, e.g. vacuum conditions, substrate growth temperature and As/group-III flux ratio, have been considered. Undoped AlGaAs layers exhibit slight p-type characteristics due to C accepters and its concentration is lower than 1015cm-3. Both n- and p-type AlGaAs layers achieve semi-insulated high resistance when the substrate temperature is lower than 580° C. The experimental results are comparable to other reports. In summary, the excellent vacuum environment, higher substrate temperature (Ts>580° C) and lower As/group-III flux ratio are the necessary conditions for growing high quality AlxGa1-xAs layers.

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Investigation of electrical and photoluminescent properties of MBE-grown Al_xGa_1-xAs layers

Abstract

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