Abstract
The electrical and photoluminescent (PL) properties of AlxGa{1-x}As layers grown by MBE have been investigated. Some experimental factors, e.g. vacuum conditions, substrate growth temperature and As/group-III flux ratio, have been considered. Undoped AlGaAs layers exhibit slight p-type characteristics due to C accepters and its concentration is lower than 1015cm-3. Both n- and p-type AlGaAs layers achieve semi-insulated high resistance when the substrate temperature is lower than 580° C. The experimental results are comparable to other reports. In summary, the excellent vacuum environment, higher substrate temperature (Ts>580° C) and lower As/group-III flux ratio are the necessary conditions for growing high quality AlxGa1-xAs layers.
Original language | English |
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Pages (from-to) | 1765-1772 |
Number of pages | 8 |
Journal | Journal of Materials Science |
Volume | 25 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1990 Mar 1 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering