Investigation of GaAs-based heterostructure-emitter bipolar transistors (HEBTs)

Wen-Chau Liu, Jung Hui Tsai, Shiou Ying Cheng, Wen Lung Chang, Hsi Jen Pan, Yung Hsin Shie

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper, we will investigate three GaAs-based heterostructure-emitter bipolar transistors (HEBTs). These HEBTs have different heterostructure-confinement material systems, e.g., Al0.5Ga0.5As/GaAs, In0.49Ga0.51P/GaAs, and Al0.45Ga0.55As/In0.2Ga0.8As/GaAs. For the studied devices, an n-GaAs emitter layer inserted between the confinement and base layer is expected to eliminate the potential spike at emitter-base (E-B) junction. Therefore, the low collector-emitter offset voltage (ΔVCE) is obtained. For the AlGaAs/GaAs HEBT, experimental results show that a current gain of 180 and a low offset voltage of 80 mV are acquired. In addition, for the InGaP/GaAs HEBT, the current gain is only 60 attributed to the use of larger emitter layer thickness (700 Å) which causes a large recombination current in neutral-emitter regime even when a large valence band discontinuity to conduction band discontinuity ratio (ΔEv/ΔEc) is presented. On the other hand, for the AlGaAs/InGaAs/GaAs HEBT, the ΔEv value can be enhanced due to the insertion of InGaAs quantum well (QW) between the n-GaAs emitter and the P+-GaAs base layer. Thus, the confinement effect of minority carriers is enhanced and a current gain of 280 is obtained, simultaneously. Consequently, our studied devices will provide a good promise for the transistor design and circuit applications.

Original languageEnglish
Pages (from-to)219-224
Number of pages6
JournalThin Solid Films
Volume324
Issue number1-2
DOIs
Publication statusPublished - 1998 Jul 1

Fingerprint

Bipolar transistors
bipolar transistors
Heterojunctions
emitters
Electric potential
Valence bands
Conduction bands
aluminum gallium arsenides
Semiconductor quantum wells
discontinuity
variable cycle engines
spike potentials
gallium arsenide
Transistors
Networks (circuits)
minority carriers
accumulators
low voltage
insertion
conduction bands

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Liu, W-C., Tsai, J. H., Cheng, S. Y., Chang, W. L., Pan, H. J., & Shie, Y. H. (1998). Investigation of GaAs-based heterostructure-emitter bipolar transistors (HEBTs). Thin Solid Films, 324(1-2), 219-224. https://doi.org/10.1016/S0040-6090(98)00372-1
Liu, Wen-Chau ; Tsai, Jung Hui ; Cheng, Shiou Ying ; Chang, Wen Lung ; Pan, Hsi Jen ; Shie, Yung Hsin. / Investigation of GaAs-based heterostructure-emitter bipolar transistors (HEBTs). In: Thin Solid Films. 1998 ; Vol. 324, No. 1-2. pp. 219-224.
@article{4ba1d7f6651e4d2791de51be176b2eb5,
title = "Investigation of GaAs-based heterostructure-emitter bipolar transistors (HEBTs)",
abstract = "In this paper, we will investigate three GaAs-based heterostructure-emitter bipolar transistors (HEBTs). These HEBTs have different heterostructure-confinement material systems, e.g., Al0.5Ga0.5As/GaAs, In0.49Ga0.51P/GaAs, and Al0.45Ga0.55As/In0.2Ga0.8As/GaAs. For the studied devices, an n-GaAs emitter layer inserted between the confinement and base layer is expected to eliminate the potential spike at emitter-base (E-B) junction. Therefore, the low collector-emitter offset voltage (ΔVCE) is obtained. For the AlGaAs/GaAs HEBT, experimental results show that a current gain of 180 and a low offset voltage of 80 mV are acquired. In addition, for the InGaP/GaAs HEBT, the current gain is only 60 attributed to the use of larger emitter layer thickness (700 {\AA}) which causes a large recombination current in neutral-emitter regime even when a large valence band discontinuity to conduction band discontinuity ratio (ΔEv/ΔEc) is presented. On the other hand, for the AlGaAs/InGaAs/GaAs HEBT, the ΔEv value can be enhanced due to the insertion of InGaAs quantum well (QW) between the n-GaAs emitter and the P+-GaAs base layer. Thus, the confinement effect of minority carriers is enhanced and a current gain of 280 is obtained, simultaneously. Consequently, our studied devices will provide a good promise for the transistor design and circuit applications.",
author = "Wen-Chau Liu and Tsai, {Jung Hui} and Cheng, {Shiou Ying} and Chang, {Wen Lung} and Pan, {Hsi Jen} and Shie, {Yung Hsin}",
year = "1998",
month = "7",
day = "1",
doi = "10.1016/S0040-6090(98)00372-1",
language = "English",
volume = "324",
pages = "219--224",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

Investigation of GaAs-based heterostructure-emitter bipolar transistors (HEBTs). / Liu, Wen-Chau; Tsai, Jung Hui; Cheng, Shiou Ying; Chang, Wen Lung; Pan, Hsi Jen; Shie, Yung Hsin.

In: Thin Solid Films, Vol. 324, No. 1-2, 01.07.1998, p. 219-224.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of GaAs-based heterostructure-emitter bipolar transistors (HEBTs)

AU - Liu, Wen-Chau

AU - Tsai, Jung Hui

AU - Cheng, Shiou Ying

AU - Chang, Wen Lung

AU - Pan, Hsi Jen

AU - Shie, Yung Hsin

PY - 1998/7/1

Y1 - 1998/7/1

N2 - In this paper, we will investigate three GaAs-based heterostructure-emitter bipolar transistors (HEBTs). These HEBTs have different heterostructure-confinement material systems, e.g., Al0.5Ga0.5As/GaAs, In0.49Ga0.51P/GaAs, and Al0.45Ga0.55As/In0.2Ga0.8As/GaAs. For the studied devices, an n-GaAs emitter layer inserted between the confinement and base layer is expected to eliminate the potential spike at emitter-base (E-B) junction. Therefore, the low collector-emitter offset voltage (ΔVCE) is obtained. For the AlGaAs/GaAs HEBT, experimental results show that a current gain of 180 and a low offset voltage of 80 mV are acquired. In addition, for the InGaP/GaAs HEBT, the current gain is only 60 attributed to the use of larger emitter layer thickness (700 Å) which causes a large recombination current in neutral-emitter regime even when a large valence band discontinuity to conduction band discontinuity ratio (ΔEv/ΔEc) is presented. On the other hand, for the AlGaAs/InGaAs/GaAs HEBT, the ΔEv value can be enhanced due to the insertion of InGaAs quantum well (QW) between the n-GaAs emitter and the P+-GaAs base layer. Thus, the confinement effect of minority carriers is enhanced and a current gain of 280 is obtained, simultaneously. Consequently, our studied devices will provide a good promise for the transistor design and circuit applications.

AB - In this paper, we will investigate three GaAs-based heterostructure-emitter bipolar transistors (HEBTs). These HEBTs have different heterostructure-confinement material systems, e.g., Al0.5Ga0.5As/GaAs, In0.49Ga0.51P/GaAs, and Al0.45Ga0.55As/In0.2Ga0.8As/GaAs. For the studied devices, an n-GaAs emitter layer inserted between the confinement and base layer is expected to eliminate the potential spike at emitter-base (E-B) junction. Therefore, the low collector-emitter offset voltage (ΔVCE) is obtained. For the AlGaAs/GaAs HEBT, experimental results show that a current gain of 180 and a low offset voltage of 80 mV are acquired. In addition, for the InGaP/GaAs HEBT, the current gain is only 60 attributed to the use of larger emitter layer thickness (700 Å) which causes a large recombination current in neutral-emitter regime even when a large valence band discontinuity to conduction band discontinuity ratio (ΔEv/ΔEc) is presented. On the other hand, for the AlGaAs/InGaAs/GaAs HEBT, the ΔEv value can be enhanced due to the insertion of InGaAs quantum well (QW) between the n-GaAs emitter and the P+-GaAs base layer. Thus, the confinement effect of minority carriers is enhanced and a current gain of 280 is obtained, simultaneously. Consequently, our studied devices will provide a good promise for the transistor design and circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=0032122981&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032122981&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(98)00372-1

DO - 10.1016/S0040-6090(98)00372-1

M3 - Article

VL - 324

SP - 219

EP - 224

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -