Investigation of GaAs-based heterostructure-emitter bipolar transistors (HEBTs)

Wen Chau Liu, Jung Hui Tsai, Shiou Ying Cheng, Wen Lung Chang, Hsi Jen Pan, Yung Hsin Shie

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Abstract

In this paper, we will investigate three GaAs-based heterostructure-emitter bipolar transistors (HEBTs). These HEBTs have different heterostructure-confinement material systems, e.g., Al0.5Ga0.5As/GaAs, In0.49Ga0.51P/GaAs, and Al0.45Ga0.55As/In0.2Ga0.8As/GaAs. For the studied devices, an n-GaAs emitter layer inserted between the confinement and base layer is expected to eliminate the potential spike at emitter-base (E-B) junction. Therefore, the low collector-emitter offset voltage (ΔVCE) is obtained. For the AlGaAs/GaAs HEBT, experimental results show that a current gain of 180 and a low offset voltage of 80 mV are acquired. In addition, for the InGaP/GaAs HEBT, the current gain is only 60 attributed to the use of larger emitter layer thickness (700 Å) which causes a large recombination current in neutral-emitter regime even when a large valence band discontinuity to conduction band discontinuity ratio (ΔEv/ΔEc) is presented. On the other hand, for the AlGaAs/InGaAs/GaAs HEBT, the ΔEv value can be enhanced due to the insertion of InGaAs quantum well (QW) between the n-GaAs emitter and the P+-GaAs base layer. Thus, the confinement effect of minority carriers is enhanced and a current gain of 280 is obtained, simultaneously. Consequently, our studied devices will provide a good promise for the transistor design and circuit applications.

Original languageEnglish
Pages (from-to)219-224
Number of pages6
JournalThin Solid Films
Volume324
Issue number1-2
DOIs
Publication statusPublished - 1998 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Liu, W. C., Tsai, J. H., Cheng, S. Y., Chang, W. L., Pan, H. J., & Shie, Y. H. (1998). Investigation of GaAs-based heterostructure-emitter bipolar transistors (HEBTs). Thin Solid Films, 324(1-2), 219-224. https://doi.org/10.1016/S0040-6090(98)00372-1