Investigation of GaAs doping superlattice structure

Wen-Chau Liu, Chung Yih Sun, Der Feng Guo, Wen Shiung Lour

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The doping superlattice (DS) concept requires, however, that (i) a considerable potential modulation is achieved on a (ii) short length scale. The Moping technique is well suited to achieve such a considerabIe potential modulation on a short length scale, since delta doping allows us to accomplish (i) high doping concentration (10 13 cm -2 ) and a (ii) localization of impurities on a length scale of the superlattice constant. Thus, these properties of the Moping technique made possible the growth and characterization of the Esaki-Tsu type doping superlattice. Here, we pay a great attention to the long period DS structure, in which an interesting S-shaped negative-differential-resistance (NDR) phenomenon resulting from the avalanche multiplications within superlattice periods was obtained.

Original languageEnglish
Title of host publicationSMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages91-92
Number of pages2
ISBN (Electronic)0780312252, 9780780312258
DOIs
Publication statusPublished - 1993 Jan 1
Event1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993 - Taipei, Taiwan
Duration: 1993 Mar 61993 Mar 7

Publication series

NameSMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation

Conference

Conference1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993
CountryTaiwan
CityTaipei
Period93-03-0693-03-07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Modelling and Simulation

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  • Cite this

    Liu, W-C., Sun, C. Y., Guo, D. F., & Lour, W. S. (1993). Investigation of GaAs doping superlattice structure. In SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation (pp. 91-92). [664571] (SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMS.1993.664571