Investigation of GaAs homojunction bipolar transistor with delta doping emitter structure

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Abstract

A GaAs homojunction bipolar transistor with a delta doping emitter structure is proposed and demonstrated. The proposed device makes use of a delta doping structure inducing a triangular barrier for minority carrier confinement, resulting in a high emitter injection efficiency. Based on the minority carrier transport in the bulk emitter region with drift-diffusion mechanism, and in the triangular barrier region with tunnelling and thermionic-emission mechanisms, an analytical derivation of current-voltage characteristics, including the effect of bandgap shrinkage, was obtained. The calculated results show that the triangular barrier is the key parameter in determining the electrical properties. In addition, due to the absence of heterojunction, the proposed device exhibits more nearly constant current gain with collector current than for the AlGaAs/GaAs heterojunction bipolar transistor (HBT). The proposed device, grown by molecular beam epitaxy, shows a differential current gain of 13 and an offset voltage of 60mV at a base-to-emitter doping ratio of 10. The offset voltage is attributed mostly to the geometric limits. With a simple chemical treatment of Na2S·9H2O, the differential current gain is enhanced to be 16 due to the reduced surface recombination. Theory and experiment indicate the potential application of the proposed device.

Original languageEnglish
Pages (from-to)406-412
Number of pages7
JournalIEE Proceedings: Circuits, Devices and Systems
Volume142
Issue number6
DOIs
Publication statusPublished - 1995 Dec 1

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Bipolar transistors
Doping (additives)
Thermionic emission
Carrier transport
Heterojunction bipolar transistors
Electric potential
Current voltage characteristics
Molecular beam epitaxy
Heterojunctions
Electric properties
Energy gap
Experiments

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

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title = "Investigation of GaAs homojunction bipolar transistor with delta doping emitter structure",
abstract = "A GaAs homojunction bipolar transistor with a delta doping emitter structure is proposed and demonstrated. The proposed device makes use of a delta doping structure inducing a triangular barrier for minority carrier confinement, resulting in a high emitter injection efficiency. Based on the minority carrier transport in the bulk emitter region with drift-diffusion mechanism, and in the triangular barrier region with tunnelling and thermionic-emission mechanisms, an analytical derivation of current-voltage characteristics, including the effect of bandgap shrinkage, was obtained. The calculated results show that the triangular barrier is the key parameter in determining the electrical properties. In addition, due to the absence of heterojunction, the proposed device exhibits more nearly constant current gain with collector current than for the AlGaAs/GaAs heterojunction bipolar transistor (HBT). The proposed device, grown by molecular beam epitaxy, shows a differential current gain of 13 and an offset voltage of 60mV at a base-to-emitter doping ratio of 10. The offset voltage is attributed mostly to the geometric limits. With a simple chemical treatment of Na2S·9H2O, the differential current gain is enhanced to be 16 due to the reduced surface recombination. Theory and experiment indicate the potential application of the proposed device.",
author = "Wei, {H. C.} and Yeong-Her Wang and Mau-phon Houng",
year = "1995",
month = "12",
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language = "English",
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TY - JOUR

T1 - Investigation of GaAs homojunction bipolar transistor with delta doping emitter structure

AU - Wei, H. C.

AU - Wang, Yeong-Her

AU - Houng, Mau-phon

PY - 1995/12/1

Y1 - 1995/12/1

N2 - A GaAs homojunction bipolar transistor with a delta doping emitter structure is proposed and demonstrated. The proposed device makes use of a delta doping structure inducing a triangular barrier for minority carrier confinement, resulting in a high emitter injection efficiency. Based on the minority carrier transport in the bulk emitter region with drift-diffusion mechanism, and in the triangular barrier region with tunnelling and thermionic-emission mechanisms, an analytical derivation of current-voltage characteristics, including the effect of bandgap shrinkage, was obtained. The calculated results show that the triangular barrier is the key parameter in determining the electrical properties. In addition, due to the absence of heterojunction, the proposed device exhibits more nearly constant current gain with collector current than for the AlGaAs/GaAs heterojunction bipolar transistor (HBT). The proposed device, grown by molecular beam epitaxy, shows a differential current gain of 13 and an offset voltage of 60mV at a base-to-emitter doping ratio of 10. The offset voltage is attributed mostly to the geometric limits. With a simple chemical treatment of Na2S·9H2O, the differential current gain is enhanced to be 16 due to the reduced surface recombination. Theory and experiment indicate the potential application of the proposed device.

AB - A GaAs homojunction bipolar transistor with a delta doping emitter structure is proposed and demonstrated. The proposed device makes use of a delta doping structure inducing a triangular barrier for minority carrier confinement, resulting in a high emitter injection efficiency. Based on the minority carrier transport in the bulk emitter region with drift-diffusion mechanism, and in the triangular barrier region with tunnelling and thermionic-emission mechanisms, an analytical derivation of current-voltage characteristics, including the effect of bandgap shrinkage, was obtained. The calculated results show that the triangular barrier is the key parameter in determining the electrical properties. In addition, due to the absence of heterojunction, the proposed device exhibits more nearly constant current gain with collector current than for the AlGaAs/GaAs heterojunction bipolar transistor (HBT). The proposed device, grown by molecular beam epitaxy, shows a differential current gain of 13 and an offset voltage of 60mV at a base-to-emitter doping ratio of 10. The offset voltage is attributed mostly to the geometric limits. With a simple chemical treatment of Na2S·9H2O, the differential current gain is enhanced to be 16 due to the reduced surface recombination. Theory and experiment indicate the potential application of the proposed device.

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U2 - 10.1049/ip-cds:19952201

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