Investigation of galvanic corrosion between TaNx barriers and copper seed by electrochemical impedance spectroscopy

Chi Cheng Hung, Wen-Shi Lee, Yu Sheng Wang, Shih Chieh Chang, Ying Lang Wang

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In this article, electrochemical impedance spectroscopy is used to characterize the mechanism of galvanic corrosion between copper (Cu) seeds and tantalum nitride (Ta Nx) barriers deposited with different N2 flow rates. By way of software simulating with EIS data, an equivalent circuit is built up to explain the corrosion behavior of the Ta Nx films' relation to the Cu seeds in an acidic chemical-mechanical-polishing slurry. The equivalent circuit can respond to changes in resistance and capacitance elements of the Cu-Ta Nx electrochemical system. It is found that the charge-transfer resistance of the Ta Nx galvanic corrosion increases with the N2 flow rate, whereas the resistance of a tantalum-oxide layer is opposite because increasing the N content of the Ta Nx films inhibits corrosion and oxidation of the Ta metals. The result is consistent with our previous investigation that the galvanic corrosion of the Ta Nx films to the Cu seeds is retarded by the N element [C. C. Hung, Y. S. Wang, W. H. Lee, S. C. Chang, and Y. L. Wang, Electrochem. Solid-State Lett., 10, H127 (2007)].

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume10
Issue number10
DOIs
Publication statusPublished - 2007 Aug 17

Fingerprint

Electrochemical impedance spectroscopy
Seed
Copper
seeds
corrosion
impedance
Corrosion
copper
Equivalent circuits
spectroscopy
equivalent circuits
Flow rate
Copper corrosion
Tantalum oxides
Tantalum
flow velocity
Chemical mechanical polishing
tantalum nitrides
tantalum oxides
Nitrides

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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title = "Investigation of galvanic corrosion between TaNx barriers and copper seed by electrochemical impedance spectroscopy",
abstract = "In this article, electrochemical impedance spectroscopy is used to characterize the mechanism of galvanic corrosion between copper (Cu) seeds and tantalum nitride (Ta Nx) barriers deposited with different N2 flow rates. By way of software simulating with EIS data, an equivalent circuit is built up to explain the corrosion behavior of the Ta Nx films' relation to the Cu seeds in an acidic chemical-mechanical-polishing slurry. The equivalent circuit can respond to changes in resistance and capacitance elements of the Cu-Ta Nx electrochemical system. It is found that the charge-transfer resistance of the Ta Nx galvanic corrosion increases with the N2 flow rate, whereas the resistance of a tantalum-oxide layer is opposite because increasing the N content of the Ta Nx films inhibits corrosion and oxidation of the Ta metals. The result is consistent with our previous investigation that the galvanic corrosion of the Ta Nx films to the Cu seeds is retarded by the N element [C. C. Hung, Y. S. Wang, W. H. Lee, S. C. Chang, and Y. L. Wang, Electrochem. Solid-State Lett., 10, H127 (2007)].",
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Investigation of galvanic corrosion between TaNx barriers and copper seed by electrochemical impedance spectroscopy. / Hung, Chi Cheng; Lee, Wen-Shi; Wang, Yu Sheng; Chang, Shih Chieh; Wang, Ying Lang.

In: Electrochemical and Solid-State Letters, Vol. 10, No. 10, 17.08.2007.

Research output: Contribution to journalArticle

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T1 - Investigation of galvanic corrosion between TaNx barriers and copper seed by electrochemical impedance spectroscopy

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AU - Lee, Wen-Shi

AU - Wang, Yu Sheng

AU - Chang, Shih Chieh

AU - Wang, Ying Lang

PY - 2007/8/17

Y1 - 2007/8/17

N2 - In this article, electrochemical impedance spectroscopy is used to characterize the mechanism of galvanic corrosion between copper (Cu) seeds and tantalum nitride (Ta Nx) barriers deposited with different N2 flow rates. By way of software simulating with EIS data, an equivalent circuit is built up to explain the corrosion behavior of the Ta Nx films' relation to the Cu seeds in an acidic chemical-mechanical-polishing slurry. The equivalent circuit can respond to changes in resistance and capacitance elements of the Cu-Ta Nx electrochemical system. It is found that the charge-transfer resistance of the Ta Nx galvanic corrosion increases with the N2 flow rate, whereas the resistance of a tantalum-oxide layer is opposite because increasing the N content of the Ta Nx films inhibits corrosion and oxidation of the Ta metals. The result is consistent with our previous investigation that the galvanic corrosion of the Ta Nx films to the Cu seeds is retarded by the N element [C. C. Hung, Y. S. Wang, W. H. Lee, S. C. Chang, and Y. L. Wang, Electrochem. Solid-State Lett., 10, H127 (2007)].

AB - In this article, electrochemical impedance spectroscopy is used to characterize the mechanism of galvanic corrosion between copper (Cu) seeds and tantalum nitride (Ta Nx) barriers deposited with different N2 flow rates. By way of software simulating with EIS data, an equivalent circuit is built up to explain the corrosion behavior of the Ta Nx films' relation to the Cu seeds in an acidic chemical-mechanical-polishing slurry. The equivalent circuit can respond to changes in resistance and capacitance elements of the Cu-Ta Nx electrochemical system. It is found that the charge-transfer resistance of the Ta Nx galvanic corrosion increases with the N2 flow rate, whereas the resistance of a tantalum-oxide layer is opposite because increasing the N content of the Ta Nx films inhibits corrosion and oxidation of the Ta metals. The result is consistent with our previous investigation that the galvanic corrosion of the Ta Nx films to the Cu seeds is retarded by the N element [C. C. Hung, Y. S. Wang, W. H. Lee, S. C. Chang, and Y. L. Wang, Electrochem. Solid-State Lett., 10, H127 (2007)].

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