Investigation of GaN-based light-emitting diodes grown on patterned sapphire substrates by contact-transferred and mask-embedded lithography

Chien Chih Kao, Yan Kuin Su, Yi Ta Hsieh, Yung Chun Lee, Chiao Yang Cheng, Chuing Liang Lin

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The influences of pattern size and etching depth of patterned sapphire substrates (PSSs) on crystal quality and light output power of light-emitting diodes (LEDs) were investigated by contact-transferred and mask-embedded lithography. The present results indicate that a smaller pattern size facilitates superior light extraction efficiency. However, a suitable pattern size and etching depth should be chosen to obtain the highest quality of GaN film. In comparison with the conventional sapphire substrate, the largest light output enhancement (̃28:9%) was observed when the pattern diameter and the etching depth of PSS were 400 and 400 nm, respectively.

Original languageEnglish
Article number062102
JournalApplied Physics Express
Volume4
Issue number6
DOIs
Publication statusPublished - 2011 Jun

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Investigation of GaN-based light-emitting diodes grown on patterned sapphire substrates by contact-transferred and mask-embedded lithography'. Together they form a unique fingerprint.

Cite this