Investigation of GaN-based light-emitting diodes grown on vicinal sapphire substrates

Yi Jung Liu; Huey-Ing Chen; Shiou Ying Cheng; Kun Wei Lin; Wen-Chau Liu

doi:10.1002/pssc.201000579

Investigation of GaN-based light-emitting diodes grown on vicinal sapphire substrates

Yi Jung Liu, Huey-Ing Chen, Shiou Ying Cheng, Kun Wei Lin, Wen-Chau Liu

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. All the electrical characteristics demonstrate that the LED with a 0.2° tilt sapphire substrate exhibits the lowest defect density while that with a 1.0° tilt sapphire exhibits the highest one. At 2 mA, the enhanced output power of 23.3% indicates the substantial reduction of defect-related nonradiative recombination centers in MQW for the LED device with a 0.2°-tilt sapphire. At 60 mA, the improved value is up to 45.7%. This is primarily caused by the presence of indium quantum dots (QDs) in MQW which provides increased quantum efficiency

Original language	English
Pages (from-to)	1664-1668
Number of pages	5
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	8
Issue number	5
DOIs	https://doi.org/10.1002/pssc.201000579
Publication status	Published - 2011 May 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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title = "Investigation of GaN-based light-emitting diodes grown on vicinal sapphire substrates",

abstract = "GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. All the electrical characteristics demonstrate that the LED with a 0.2° tilt sapphire substrate exhibits the lowest defect density while that with a 1.0° tilt sapphire exhibits the highest one. At 2 mA, the enhanced output power of 23.3% indicates the substantial reduction of defect-related nonradiative recombination centers in MQW for the LED device with a 0.2°-tilt sapphire. At 60 mA, the improved value is up to 45.7%. This is primarily caused by the presence of indium quantum dots (QDs) in MQW which provides increased quantum efficiency",

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T1 - Investigation of GaN-based light-emitting diodes grown on vicinal sapphire substrates

AU - Liu, Yi Jung

AU - Chen, Huey-Ing

AU - Cheng, Shiou Ying

AU - Lin, Kun Wei

AU - Liu, Wen-Chau

PY - 2011/5/1

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N2 - GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. All the electrical characteristics demonstrate that the LED with a 0.2° tilt sapphire substrate exhibits the lowest defect density while that with a 1.0° tilt sapphire exhibits the highest one. At 2 mA, the enhanced output power of 23.3% indicates the substantial reduction of defect-related nonradiative recombination centers in MQW for the LED device with a 0.2°-tilt sapphire. At 60 mA, the improved value is up to 45.7%. This is primarily caused by the presence of indium quantum dots (QDs) in MQW which provides increased quantum efficiency

AB - GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. All the electrical characteristics demonstrate that the LED with a 0.2° tilt sapphire substrate exhibits the lowest defect density while that with a 1.0° tilt sapphire exhibits the highest one. At 2 mA, the enhanced output power of 23.3% indicates the substantial reduction of defect-related nonradiative recombination centers in MQW for the LED device with a 0.2°-tilt sapphire. At 60 mA, the improved value is up to 45.7%. This is primarily caused by the presence of indium quantum dots (QDs) in MQW which provides increased quantum efficiency

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Investigation of GaN-based light-emitting diodes grown on vicinal sapphire substrates

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