Investigation of heterostructure-confinement-emitter transistors

Wen Shiung Lour, Wen Chau Liu, Yeong Her Wang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper we review our current investigation on heterostructure-confinement-emitter transistors, i.e. heterostructure-emitter bipolar (HEBT) and superlattice-emitter (SET), and then describe further advances in negative-differential-resistance (NDR) devices just utilizing GaAs-based materials. An improved HEBT using an Al0.5Ga0.5As as a confinement layer exhibits not only a common-emitter current gain of 180 but also a very small offset voltage of 80 mV when operated under a normal mode, which is much better than for a Al0.3Ga0.3As confinement layer. An S-shaped NDR phenomenon is observed when operating under reverse mode. On the other hand, instead of an AlGaAs bulk layer, a five-period AlGaAs/GaAs superlattice is employed as a confinement and tunneling barrier for the SET device. Experimentally, a common-emitter current gain of 65 (maximum of 95 at 300 K) and double N-shaped NDR performance with peak-to-valley ratios (PVRs) of 4 and 2.6 are obtained at 77 K. These discussions are followed by theoretical considerations and experimental analyses. It is found that the new devices studied are of considerable interest for a variety of potential applications that could be realized with greatly reduced circuit complexity.

Original languageEnglish
Pages (from-to)117-124
Number of pages8
JournalSolid State Electronics
Volume35
Issue number2
DOIs
Publication statusPublished - 1992 Feb

Fingerprint

Heterojunctions
Transistors
emitters
transistors
aluminum gallium arsenides
Networks (circuits)
Electric potential
valleys
gallium arsenide
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{90c67e806d9d4dbcbde8aff9d807a992,
title = "Investigation of heterostructure-confinement-emitter transistors",
abstract = "In this paper we review our current investigation on heterostructure-confinement-emitter transistors, i.e. heterostructure-emitter bipolar (HEBT) and superlattice-emitter (SET), and then describe further advances in negative-differential-resistance (NDR) devices just utilizing GaAs-based materials. An improved HEBT using an Al0.5Ga0.5As as a confinement layer exhibits not only a common-emitter current gain of 180 but also a very small offset voltage of 80 mV when operated under a normal mode, which is much better than for a Al0.3Ga0.3As confinement layer. An S-shaped NDR phenomenon is observed when operating under reverse mode. On the other hand, instead of an AlGaAs bulk layer, a five-period AlGaAs/GaAs superlattice is employed as a confinement and tunneling barrier for the SET device. Experimentally, a common-emitter current gain of 65 (maximum of 95 at 300 K) and double N-shaped NDR performance with peak-to-valley ratios (PVRs) of 4 and 2.6 are obtained at 77 K. These discussions are followed by theoretical considerations and experimental analyses. It is found that the new devices studied are of considerable interest for a variety of potential applications that could be realized with greatly reduced circuit complexity.",
author = "Lour, {Wen Shiung} and Liu, {Wen Chau} and Wang, {Yeong Her}",
year = "1992",
month = "2",
doi = "10.1016/0038-1101(92)90050-M",
language = "English",
volume = "35",
pages = "117--124",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "2",

}

Investigation of heterostructure-confinement-emitter transistors. / Lour, Wen Shiung; Liu, Wen Chau; Wang, Yeong Her.

In: Solid State Electronics, Vol. 35, No. 2, 02.1992, p. 117-124.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of heterostructure-confinement-emitter transistors

AU - Lour, Wen Shiung

AU - Liu, Wen Chau

AU - Wang, Yeong Her

PY - 1992/2

Y1 - 1992/2

N2 - In this paper we review our current investigation on heterostructure-confinement-emitter transistors, i.e. heterostructure-emitter bipolar (HEBT) and superlattice-emitter (SET), and then describe further advances in negative-differential-resistance (NDR) devices just utilizing GaAs-based materials. An improved HEBT using an Al0.5Ga0.5As as a confinement layer exhibits not only a common-emitter current gain of 180 but also a very small offset voltage of 80 mV when operated under a normal mode, which is much better than for a Al0.3Ga0.3As confinement layer. An S-shaped NDR phenomenon is observed when operating under reverse mode. On the other hand, instead of an AlGaAs bulk layer, a five-period AlGaAs/GaAs superlattice is employed as a confinement and tunneling barrier for the SET device. Experimentally, a common-emitter current gain of 65 (maximum of 95 at 300 K) and double N-shaped NDR performance with peak-to-valley ratios (PVRs) of 4 and 2.6 are obtained at 77 K. These discussions are followed by theoretical considerations and experimental analyses. It is found that the new devices studied are of considerable interest for a variety of potential applications that could be realized with greatly reduced circuit complexity.

AB - In this paper we review our current investigation on heterostructure-confinement-emitter transistors, i.e. heterostructure-emitter bipolar (HEBT) and superlattice-emitter (SET), and then describe further advances in negative-differential-resistance (NDR) devices just utilizing GaAs-based materials. An improved HEBT using an Al0.5Ga0.5As as a confinement layer exhibits not only a common-emitter current gain of 180 but also a very small offset voltage of 80 mV when operated under a normal mode, which is much better than for a Al0.3Ga0.3As confinement layer. An S-shaped NDR phenomenon is observed when operating under reverse mode. On the other hand, instead of an AlGaAs bulk layer, a five-period AlGaAs/GaAs superlattice is employed as a confinement and tunneling barrier for the SET device. Experimentally, a common-emitter current gain of 65 (maximum of 95 at 300 K) and double N-shaped NDR performance with peak-to-valley ratios (PVRs) of 4 and 2.6 are obtained at 77 K. These discussions are followed by theoretical considerations and experimental analyses. It is found that the new devices studied are of considerable interest for a variety of potential applications that could be realized with greatly reduced circuit complexity.

UR - http://www.scopus.com/inward/record.url?scp=0026818244&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026818244&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(92)90050-M

DO - 10.1016/0038-1101(92)90050-M

M3 - Article

AN - SCOPUS:0026818244

VL - 35

SP - 117

EP - 124

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 2

ER -