Investigation of HfSiOXPassivation Effect on AlGaN/GaN HEMT

Soumen Mazumder; Yeong Her Wang

doi:10.1109/ISDCS49393.2020.9262998

Investigation of HfSiO_XPassivation Effect on AlGaN/GaN HEMT

Soumen Mazumder, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

AlGaN/GaN-based high electron mobility Transistors (HEMTs) were fabricated on Si substrate. Surface passivation effect on AlGaN/GaN HEMTs was investigated with hafnium silicate (HfSiOx) passivation layer deposited by atomic layer deposition (ALD) at 250 °C. The DC current-voltage characteristics (ID-VD), pulsed ID-VD characteristics, and transfer characteristics of the device were compared before and after passivation. The enhancement of IDMAX and GMMAX with better gate controllability as well as significant reduction of current degradation phenomenon due to the suppression of surface states, was observed in the passivated (HfSiOX) HEMT compared to unpassivated device

Original language	English
Title of host publication	3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728165646
DOIs	https://doi.org/10.1109/ISDCS49393.2020.9262998
Publication status	Published - 2020 Mar 4
Event	3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Shibpur, India Duration: 2020 Mar 4 → 2020 Mar 6

Publication series

Name	3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Proceedings

Conference

Conference	3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020
Country/Territory	India
City	Shibpur
Period	20-03-04 → 20-03-06

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials
Instrumentation

Access to Document

10.1109/ISDCS49393.2020.9262998

Cite this

Mazumder, S., & Wang, Y. H. (2020). Investigation of HfSiO_XPassivation Effect on AlGaN/GaN HEMT. In 3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Proceedings Article 9262998 (3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDCS49393.2020.9262998

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title = "Investigation of HfSiOXPassivation Effect on AlGaN/GaN HEMT",

abstract = "AlGaN/GaN-based high electron mobility Transistors (HEMTs) were fabricated on Si substrate. Surface passivation effect on AlGaN/GaN HEMTs was investigated with hafnium silicate (HfSiOx) passivation layer deposited by atomic layer deposition (ALD) at 250 °C. The DC current-voltage characteristics (ID-VD), pulsed ID-VD characteristics, and transfer characteristics of the device were compared before and after passivation. The enhancement of IDMAX and GMMAX with better gate controllability as well as significant reduction of current degradation phenomenon due to the suppression of surface states, was observed in the passivated (HfSiOX) HEMT compared to unpassivated device ",

author = "Soumen Mazumder and Wang, {Yeong Her}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 ; Conference date: 04-03-2020 Through 06-03-2020",

year = "2020",

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doi = "10.1109/ISDCS49393.2020.9262998",

language = "English",

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Mazumder, S & Wang, YH 2020, Investigation of HfSiO_XPassivation Effect on AlGaN/GaN HEMT. in 3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Proceedings., 9262998, 3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020, Shibpur, India, 20-03-04. https://doi.org/10.1109/ISDCS49393.2020.9262998

Investigation of HfSiO_XPassivation Effect on AlGaN/GaN HEMT. / Mazumder, Soumen; Wang, Yeong Her.
3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9262998 (3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - AlGaN/GaN-based high electron mobility Transistors (HEMTs) were fabricated on Si substrate. Surface passivation effect on AlGaN/GaN HEMTs was investigated with hafnium silicate (HfSiOx) passivation layer deposited by atomic layer deposition (ALD) at 250 °C. The DC current-voltage characteristics (ID-VD), pulsed ID-VD characteristics, and transfer characteristics of the device were compared before and after passivation. The enhancement of IDMAX and GMMAX with better gate controllability as well as significant reduction of current degradation phenomenon due to the suppression of surface states, was observed in the passivated (HfSiOX) HEMT compared to unpassivated device

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