Investigation of HfSiOXPassivation Effect on AlGaN/GaN HEMT

Soumen Mazumder, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

AlGaN/GaN-based high electron mobility Transistors (HEMTs) were fabricated on Si substrate. Surface passivation effect on AlGaN/GaN HEMTs was investigated with hafnium silicate (HfSiOx) passivation layer deposited by atomic layer deposition (ALD) at 250 °C. The DC current-voltage characteristics (ID-VD), pulsed ID-VD characteristics, and transfer characteristics of the device were compared before and after passivation. The enhancement of IDMAX and GMMAX with better gate controllability as well as significant reduction of current degradation phenomenon due to the suppression of surface states, was observed in the passivated (HfSiOX) HEMT compared to unpassivated device

Original languageEnglish
Title of host publication3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728165646
DOIs
Publication statusPublished - 2020 Mar 4
Event3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Shibpur, India
Duration: 2020 Mar 42020 Mar 6

Publication series

Name3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Proceedings

Conference

Conference3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020
Country/TerritoryIndia
CityShibpur
Period20-03-0420-03-06

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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