TY - GEN
T1 - Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process
AU - Su, Yin Hsien
AU - Kuo, Tai Chen
AU - Lee, Wen Hsi
AU - Lee, Yao Ren
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/21
Y1 - 2016/11/21
N2 - MOSFETs with high-k and metal gate materials have been adopted nowadays. However, using traditional rapid thermal annealing as the annealing process after metal deposition causes thick SiO2 inter-layers and large flat-band shift. For future processes, an alternative post-metal annealing method has to be found. This study investigated electrical characteristics and physical properties of TiN/Al/TiN/HfO2/Si MOS capacitors annealed with a microwave annealing technique. The results show that samples annealed by microwave annealing at 2700W demonstrate low equivalent oxide thickness, low interface states density and low oxide trapped charge density. Besides, the diffusion of Al into oxides films is also suppressed. As a result, for high-k/metal gate MOS capacitors, high oxide capacitance, high breakdown voltage and low leakage current can be obtained using microwave annealing.
AB - MOSFETs with high-k and metal gate materials have been adopted nowadays. However, using traditional rapid thermal annealing as the annealing process after metal deposition causes thick SiO2 inter-layers and large flat-band shift. For future processes, an alternative post-metal annealing method has to be found. This study investigated electrical characteristics and physical properties of TiN/Al/TiN/HfO2/Si MOS capacitors annealed with a microwave annealing technique. The results show that samples annealed by microwave annealing at 2700W demonstrate low equivalent oxide thickness, low interface states density and low oxide trapped charge density. Besides, the diffusion of Al into oxides films is also suppressed. As a result, for high-k/metal gate MOS capacitors, high oxide capacitance, high breakdown voltage and low leakage current can be obtained using microwave annealing.
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U2 - 10.1109/NANO.2016.7751519
DO - 10.1109/NANO.2016.7751519
M3 - Conference contribution
AN - SCOPUS:85006851019
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 773
EP - 776
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -