Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process

Yin Hsien Su, Tai Chen Kuo, Wen-Shi Lee, Yao Ren Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

MOSFETs with high-k and metal gate materials have been adopted nowadays. However, using traditional rapid thermal annealing as the annealing process after metal deposition causes thick SiO2 inter-layers and large flat-band shift. For future processes, an alternative post-metal annealing method has to be found. This study investigated electrical characteristics and physical properties of TiN/Al/TiN/HfO2/Si MOS capacitors annealed with a microwave annealing technique. The results show that samples annealed by microwave annealing at 2700W demonstrate low equivalent oxide thickness, low interface states density and low oxide trapped charge density. Besides, the diffusion of Al into oxides films is also suppressed. As a result, for high-k/metal gate MOS capacitors, high oxide capacitance, high breakdown voltage and low leakage current can be obtained using microwave annealing.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages773-776
Number of pages4
ISBN (Electronic)9781509039142
DOIs
Publication statusPublished - 2016 Nov 21
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 2016 Aug 222016 Aug 25

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period16-08-2216-08-25

Fingerprint

MOS capacitors
capacitors
Metals
Microwaves
Annealing
microwaves
annealing
Oxides
metals
oxides
Rapid thermal annealing
Interface states
Charge density
Electric breakdown
Leakage currents
Oxide films
electrical faults
Capacitance
Physical properties
oxide films

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Su, Y. H., Kuo, T. C., Lee, W-S., & Lee, Y. R. (2016). Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 773-776). [7751519] (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751519
Su, Yin Hsien ; Kuo, Tai Chen ; Lee, Wen-Shi ; Lee, Yao Ren. / Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process. 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 773-776 (16th International Conference on Nanotechnology - IEEE NANO 2016).
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title = "Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process",
abstract = "MOSFETs with high-k and metal gate materials have been adopted nowadays. However, using traditional rapid thermal annealing as the annealing process after metal deposition causes thick SiO2 inter-layers and large flat-band shift. For future processes, an alternative post-metal annealing method has to be found. This study investigated electrical characteristics and physical properties of TiN/Al/TiN/HfO2/Si MOS capacitors annealed with a microwave annealing technique. The results show that samples annealed by microwave annealing at 2700W demonstrate low equivalent oxide thickness, low interface states density and low oxide trapped charge density. Besides, the diffusion of Al into oxides films is also suppressed. As a result, for high-k/metal gate MOS capacitors, high oxide capacitance, high breakdown voltage and low leakage current can be obtained using microwave annealing.",
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Su, YH, Kuo, TC, Lee, W-S & Lee, YR 2016, Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751519, 16th International Conference on Nanotechnology - IEEE NANO 2016, Institute of Electrical and Electronics Engineers Inc., pp. 773-776, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 16-08-22. https://doi.org/10.1109/NANO.2016.7751519

Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process. / Su, Yin Hsien; Kuo, Tai Chen; Lee, Wen-Shi; Lee, Yao Ren.

16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 773-776 7751519 (16th International Conference on Nanotechnology - IEEE NANO 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - MOSFETs with high-k and metal gate materials have been adopted nowadays. However, using traditional rapid thermal annealing as the annealing process after metal deposition causes thick SiO2 inter-layers and large flat-band shift. For future processes, an alternative post-metal annealing method has to be found. This study investigated electrical characteristics and physical properties of TiN/Al/TiN/HfO2/Si MOS capacitors annealed with a microwave annealing technique. The results show that samples annealed by microwave annealing at 2700W demonstrate low equivalent oxide thickness, low interface states density and low oxide trapped charge density. Besides, the diffusion of Al into oxides films is also suppressed. As a result, for high-k/metal gate MOS capacitors, high oxide capacitance, high breakdown voltage and low leakage current can be obtained using microwave annealing.

AB - MOSFETs with high-k and metal gate materials have been adopted nowadays. However, using traditional rapid thermal annealing as the annealing process after metal deposition causes thick SiO2 inter-layers and large flat-band shift. For future processes, an alternative post-metal annealing method has to be found. This study investigated electrical characteristics and physical properties of TiN/Al/TiN/HfO2/Si MOS capacitors annealed with a microwave annealing technique. The results show that samples annealed by microwave annealing at 2700W demonstrate low equivalent oxide thickness, low interface states density and low oxide trapped charge density. Besides, the diffusion of Al into oxides films is also suppressed. As a result, for high-k/metal gate MOS capacitors, high oxide capacitance, high breakdown voltage and low leakage current can be obtained using microwave annealing.

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Su YH, Kuo TC, Lee W-S, Lee YR. Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process. In 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 773-776. 7751519. (16th International Conference on Nanotechnology - IEEE NANO 2016). https://doi.org/10.1109/NANO.2016.7751519