Investigation of hot-carrier-induced degradation mechanisms in p-type high-voltage drain extended metal-oxide-semiconductor transistors

Jone-Fang Chen, Shiang Yu Chen, Kuo Ming Wu, C. M. Liu

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Hot-carrier-induced degradation in p-type drain extended metal-oxide-semiconductor (DEMOS) devices is investigated. The gate voltage biased at the second substrate current peak produces the most device degradation. The generation of interface state (ΔNit) in the channel region, ΔNit in the drift region under poly-gate, and negative oxide-trapped charge (ΔNot) in the drift region outside poly-gate are responsible for device parameter degradation. ΔN it in the channel region causes threshold voltage and maximum transconductance degradation. ΔNot in the drift region outside poly-gate leads to the increase of linear drain current (Idlin) at the beginning of stress. ΔNit in the drift region under poly-gate results in the turnaround behavior of /llin/ shift as the stress time is longer.

Original languageEnglish
Article number04C039
JournalJapanese Journal of Applied Physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Investigation of hot-carrier-induced degradation mechanisms in p-type high-voltage drain extended metal-oxide-semiconductor transistors'. Together they form a unique fingerprint.

Cite this