Investigation of hot-carrier-induced degradation mechanisms in p-type high-voltage drain extended metal-oxide-semiconductor transistors

Hot-carrier-induced degradation in p-type drain extended metal-oxide-semiconductor (DEMOS) devices is investigated. The gate voltage biased at the second substrate current peak produces the most device degradation. The generation of interface state (ΔNit) in the channel region, ΔN_it in the drift region under poly-gate, and negative oxide-trapped charge (ΔN_ot) in the drift region outside poly-gate are responsible for device parameter degradation. ΔN _it in the channel region causes threshold voltage and maximum transconductance degradation. ΔN_ot in the drift region outside poly-gate leads to the increase of linear drain current (I_dlin) at the beginning of stress. ΔN_it in the drift region under poly-gate results in the turnaround behavior of /l_lin/ shift as the stress time is longer.